Abstract: A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

Abstract: A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.

Abstract: A storage device and a storage system employing the storage device. In one embodiment, the storage device comprises an electron emitter and a storage medium comprising an information layer having at least a first state and a second state for storing information. The storage device comprises a resistance measurement system coupled to the storage medium for reading the information stored at the information layer by measuring resistance to determine a state of a storage area on the information layer.

Abstract: An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

Abstract: An emitter includes a single crystal electron source, an epitaxial layer, and a thin conductor layer. When an electric field is induced from the conductor across the epitaxial layer, electrons are emitted from the electron source, transported through the epitaxial layer, and are emitted from the conductor layer.

Abstract: A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.

Abstract: A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.

Abstract: A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.