Patents by Inventor Robert C. Linares
Robert C. Linares has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220127751Abstract: A method includes positioning a designated rectangular single crystal diamond seed in a diamond growth reactor, the designated single crystal diamond seed having a (001) plane, with the edges being (001) planes and corners are pointed in the <110> direction, positioning a pair of blocking seeds on opposite edges of the designated seed, and growing diamond of the designated seed and blocking seeds, wherein lateral single crystal growth occurs laterally from the designated seed.Type: ApplicationFiled: October 27, 2021Publication date: April 28, 2022Inventor: Robert C. Linares
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Patent number: 9227343Abstract: A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones.Type: GrantFiled: December 31, 2012Date of Patent: January 5, 2016Assignee: SCIO Diamond Technology CorporationInventors: Robert C. Linares, Patrick J. Doering
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Publication number: 20150240381Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.Type: ApplicationFiled: March 9, 2015Publication date: August 27, 2015Inventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8974599Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.Type: GrantFiled: October 29, 2004Date of Patent: March 10, 2015Assignee: SCIO Diamond Technology CorporationInventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8641999Abstract: Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.Type: GrantFiled: July 11, 2005Date of Patent: February 4, 2014Assignee: SCIO Diamond Technology CorporationInventors: Patrick J. Doering, Alfred Genis, Robert C. Linares, John J. Calabria
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Patent number: 8591856Abstract: An electrolytic cell includes a container for holding an electrolyte. A conductively doped single crystal diamond anode electrode is positioned to be disposed within the electrolyte, as is a conductive cathode electrode. Conductors are coupled to the electrodes for coupling to a power supply. An electrolyte inlet and an electrolyte outlet are coupled to the container for causing electrolyte to flow past the electrodes. The anode electrode is downstream from the cathode electrode in one embodiment, such that an electrolyte comprising water is purified by generation of oxygen and/or ozone.Type: GrantFiled: March 29, 2006Date of Patent: November 26, 2013Assignee: SCIO Diamond Technology CorporationInventors: Patrick J. Doering, Robert C. Linares, Alicia E. Novak, John M. Abrahams, Michael Murray
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Patent number: 8553208Abstract: A system includes a radiation source to provide short wavelength light. A holder positions a table of a gemstone to receive the light. A detector is positioned to receive fluorescent light from the gemstone when the gemstone is a CVD grown gemstone.Type: GrantFiled: June 7, 2012Date of Patent: October 8, 2013Assignee: SCIO Diamond Technology CorporationInventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8514377Abstract: Diamonds may be identified as grown by the use of chemical vapor deposition. One or more diamonds may be placed on a surface and exposed to short wavelength light. Diamonds that fluoresce red may be identified as grown by the use of chemical vapor deposition. In some embodiments, the diamonds are cooled prior to exposure to the short wavelength light.Type: GrantFiled: March 12, 2012Date of Patent: August 20, 2013Assignee: SCIO Diamond Technology CorporationInventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8455278Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: November 14, 2011Date of Patent: June 4, 2013Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Patent number: 8435833Abstract: Wide bandgap devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing a wide bandgap material on diamond and building devices on that grown layer. The second method involves bonding a wide bandgap layer (device or film) onto diamond and building the device onto the bonded layer. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other wide bandgap semiconductor devices.Type: GrantFiled: March 2, 2012Date of Patent: May 7, 2013Assignee: Apollo Diamond, Inc.Inventor: Robert C. Linares
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Patent number: 8342164Abstract: A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones.Type: GrantFiled: May 8, 2009Date of Patent: January 1, 2013Assignee: SCIO Diamond Technology CorporationInventors: Robert C. Linares, Patrick J. Doering
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Publication number: 20120242977Abstract: A system includes a radiation source to provide short wavelength light. A holder positions a table of a gemstone to receive the light. A detector is positioned to receive fluorescent light from the gemstone when the gemstone is a CVD grown gemstone.Type: ApplicationFiled: June 7, 2012Publication date: September 27, 2012Applicant: Apollo Diamond Gemstone CorporationInventors: Robert C. Linares, Patrick J. Doering
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Publication number: 20120170019Abstract: Diamonds may be identified as grown by the use of chemical vapor deposition. One or more diamonds may be placed on a surface and exposed to short wavelength light. Diamonds that fluoresce red may be identified as grown by the use of chemical vapor deposition. In some embodiments, the diamonds are cooled prior to exposure to the short wavelength light.Type: ApplicationFiled: March 12, 2012Publication date: July 5, 2012Applicant: Apollo Diamond Gemstone CorporationInventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8213000Abstract: A system includes a radiation source to provide short wavelength light. A holder positions a table of a gemstone to receive the light. A detector is positioned to receive fluorescent light from the gemstone when the gemstone is a CVD grown gemstone.Type: GrantFiled: May 8, 2009Date of Patent: July 3, 2012Assignee: Apollo Diamond Gemstone CorporationInventors: Robert C. Linares, Patrick J. Doering
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Publication number: 20120164786Abstract: Wide bandgap devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing a wide bandgap material on diamond and building devices on that grown layer. The second method involves bonding a wide bandgap layer (device or film) onto diamond and building the device onto the bonded layer. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other wide bandgap semiconductor devices.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: Apollo Diamond, IncInventor: Robert C. Linares
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Patent number: 8187380Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.Type: GrantFiled: October 29, 2004Date of Patent: May 29, 2012Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering
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Patent number: 8158455Abstract: First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.Type: GrantFiled: August 24, 2009Date of Patent: April 17, 2012Assignee: Apollo Diamond, Inc.Inventor: Robert C. Linares
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Patent number: 8134694Abstract: Diamonds may be identified as grown by the use of chemical vapor deposition. One or more diamonds may be placed on a surface and exposed to short wavelength light. Diamonds that fluoresce red may be identified as grown by the use of chemical vapor deposition. In some embodiments, the diamonds are cooled prior to exposure to the short wavelength light.Type: GrantFiled: May 8, 2009Date of Patent: March 13, 2012Assignee: Apollo Diamond Gemstone CorporationInventors: Robert C. Linares, Patrick J. Doering
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Publication number: 20120058602Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: November 14, 2011Publication date: March 8, 2012Applicant: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Patent number: 8129733Abstract: Gallium nitride devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, gallium nitride diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing gallium nitride on diamond and building devices on that gallium nitride layer. The second method involves bonding gallium nitride (device or film) onto diamond and building the device onto the bonded gallium nitride. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other gallium nitride semiconductor devices.Type: GrantFiled: January 26, 2006Date of Patent: March 6, 2012Assignee: Apollo Diamond, IncInventor: Robert C. Linares