Patents by Inventor Robert Cadoret

Robert Cadoret has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing an epitaxial layer of gallium nitride by the HVPE method
    Patent number: 6632725
    Abstract: A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: October 14, 2003
    Assignees: Centre National de la Recherche Scientifique (CNRS), Universite Blaise Pascal
    Inventors: Agnès Trassoudaine, Robert Cadoret, Eric Aujol
  • Process for producing an epitaxial layer of gallium nitride by the HVPE method
    Publication number: 20030013222
    Abstract: A process for producing an epitaxial layer of gallium nitride (GaN) by hydride vapor-phase epitaxy (HVPE), as well as to the epitaxial layers which can be obtained by this process are provided. Such a process makes it possible to avoid parasitic GaN deposition on the walls of the reactor.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 16, 2003
    Inventors: Agnes Trassoudaine, Robert Cadoret, Eric Aujol