Abstract: A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.

Abstract: Improving an area scaling on tri-gate transistors is described. An insulating layer is deposited on a fin on a substrate. The insulating layer is recessed to expose the fin. The corner of the fin is rounded off using a noble gas. A gate dielectric layer is deposited on the rounded corner. The radius of curvature of the corner is controllable by adjusting a bias power to the substrate. The radius of curvature of the corner is determined based on the width of the fin to reduce an area scaling of the array.

Abstract: A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.

Abstract: An automated highway system reduces the data processing requirements on the vehicles and distributes the processing requirements throughout the automated highway system infra-structure. In this system, a vehicle is detected by use of a vehicle on-board transponder. This transponder responds to an omni-directional radio frequency transmission from a highway control facility used by the automated highway system in the vicinity of the vehicle. The highway control facility interrogates the vehicle transponder for identification, destination, and other pertinent travel parameters or user services to route the vehicle, schedule maintenance, provide user services, and so on. Additionally, the highway control facility calculates the location of the vehicle and energizes vehicle mounted actuators to steer, accelerate and brake the vehicle as necessary. The vehicle maintains constant communications with the automated highway system facilities while on the automated highway system highway.

Abstract: Quartz is purified by removing mineral impurities, particularly alkali metal impurities, from within the quartz crystal lattice structure. According to the disclosed process, quartz crystals are subjected to a pretreatment that removes surface bound impurities and then contacted with gaseous HCl at a temperature of from 800.degree. C. to 1600.degree. C. for a period of time of from a few minutes to several hours, thereby diffusing the mineral impurities to the quartz crystal surface where they form salts with chloride ion, removing the salts, and recovering the purified quartz crystals.

Abstract: Quartz is purified by removing mineral impurities, particularly alkali metal impurities, from within the quartz crystal lattice structure. According to the disclosed process, quartz crystals are subjected to a pretreatment that removes surface bound impurities and then contacted with gaseous HCl at a temperature of from 800.degree. C. to 1600.degree. C. for a period of time of from a few minutes to several hours, thereby diffusing the mineral impurities to the quartz crystal surface where they form salts with chloride ion, removing the salts, and recovering the purified quartz crystals.