Abstract: A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

Abstract: A clamp is provided that has a pair of clamp bodies which each have an inner surface. The inner surfaces of each clamp body are oriented to face one another in a spaced parallel relationship. A pair of parallel scissors linkages are coupled to the device that operate to move the clamp bodies in parallel relation relative to one another. Each scissors linkage extends from one side surface of one clamp body to a corresponding side surface of the other clamp body. A threaded rod is coupled to the pair of scissors linkages between the clamp bodies and is oriented with its axis of rotation parallel to the inner surfaces of the clamp bodies. The threaded rod is operable to move the clamp bodies either towards one another or away from one another in spaced parallel relation by rotation of the rod. By operation of the rod, the device may be used as either a clamping device or an expansion device.