Abstract: Methods and systems for determining boundaries of patterned features formed on a specimen from an unresolved image of the specimen are provided. One system includes computer subsystem(s) configured for comparing a difference image in which patterned feature(s) are unresolved to different simulated images. The different simulated images are generated by simulating difference images generated for the patterned feature(s) formed on the specimen with different perturbations, respectively. The computer subsystem(s) are configured for, based on the comparing, assigning an amplitude to each of the different perturbations. The computer subsystem(s) are further configured for determining one or more boundaries of the patterned feature(s) formed on the specimen by applying the different perturbations to one or more designed boundaries of the patterned feature(s) with the assigned amplitudes.

Abstract: Methods and systems for determining boundaries of patterned features formed on a specimen from an unresolved image of the specimen are provided. One system includes computer subsystem(s) configured for comparing a difference image in which patterned feature(s) are unresolved to different simulated images. The different simulated images are generated by simulating difference images generated for the patterned feature(s) formed on the specimen with different perturbations, respectively. The computer subsystem(s) are configured for, based on the comparing, assigning an amplitude to each of the different perturbations. The computer subsystem(s) are further configured for determining one or more boundaries of the patterned feature(s) formed on the specimen by applying the different perturbations to one or more designed boundaries of the patterned feature(s) with the assigned amplitudes.

Abstract: Reverse decoration can be used to detect defects in a device. The wafer can include NAND stacks or other devices. The defect can be a channel bridge, a void, or other types of defects. Reverse decoration can preserve a defect and/or can improve defect detection. A portion of a layer may be removed from a device. A layer also may be added to the device, such as on the defect, and some of the layer may be removed.

Abstract: Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Abstract: A computer-based apparatus for adjusting an auto-focus in a wafer inspection system, including: a wafer adjustment system; and an electronic feedback loop system configured to compare an intensity of a first light beam rotating in a first spiral about a first central axis, and when the intensity is less than a preselected threshold, adjust, using the wafer adjustment system, a position of the wafer until the intensity reaches the preselected threshold.

Abstract: Reverse decoration can be used to detect defects in a device. The wafer can include NAND stacks or other devices. The defect can be a channel bridge, a void, or other types of defects. Reverse decoration can preserve a defect and/or can improve defect detection. A portion of a layer may be removed from a device. A layer also may be added to the device, such as on the defect, and some of the layer may be removed.

Abstract: Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Abstract: Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Abstract: A computer-based method for inspecting a wafer, including: storing, in a memory element for at least one computer, computer readable instructions; detecting a first light beam rotating in a first spiral about a first central axis; and executing, using a processor for the at least one computer, the computer readable instructions to generate, using the detected first light beam, an image including at least one shape, determine an orientation of the at least one shape or a size of the at least one shape, and calculate a depth of a defect in the wafer according to the orientation or the size.

Abstract: Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Abstract: In one embodiment, a surface inspection system comprises a radiation directing assembly to target radiation onto a surface of an object, the radiation directing assembly comprising a radiation source that emits a broadband radiation beam, a polarization control assembly comprising at least one of a linear polarizer and an apochromatic retarder, an aperture control mechanism, and a beam splitter, a radiation collection assembly to collect radiation reflected from the surface of the object, the radiation collection assembly comprising, a polarization control assembly comprising at least one of a linear polarizer and an apochromatic retarder, an aperture control mechanism, and at least one radiation sensing device.

Abstract: A method to correct the intensities of an absorption image for light scattered within foreground tissue. Specifically the amount of light scattered between the focal plane of the probe and the tissue surface is estimated from the image. This scattered light contribution is then subtracted from the original image.