Abstract: The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: A nanoparticle which includes a multi-armed core and surface decoration which is attached to the core is prepared. A multi-armed core is provided by any of a number of possible routes, exemplary preferred routes being living anionic polymerization that is initiated by a reactive, functionalized anionic initiator and ?-caprolactone polymerization of a bis-MPA dendrimer. The multi-armed core is preferably functionalized on some or all arms. A coupling reaction is then employed to bond surface decoration to one or more arms of the multi-armed core. The surface decoration is a small molecule or oligomer with a degree of polymerization less than 50, a preferred decoration being a PEG oligomer with degree of polymerization between 2 and 24. The nanoparticles (particle size ?10 nm) are employed as sacrificial templating porogens to form porous dielectrics. The porogens are mixed with matrix precursors (e.g., methyl silsesquioxane resin), the matrix vitrifies, and the porogens are removed via burnout.

Abstract: A composition of matter for a recording medium in atomic force data storage devices. The composition includes polyimide oligomers having covalently bonded monomers forming a backbone, the oligomer thermally stable to at least 400° C.; one or more covalent bonding cross-linking moieties incorporated into the polyimide oligomer; and one or more hydrogen bonding cross-linking moieties incorporated into the polyimide oligomer. The covalent and hydrogen bonding cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Abstract: A nanoshell is disclosed, comprising a star polymer occlusion complex comprising i) an amphiphilic unimolecular star polymer having a crosslinked core covalently linked to 6 or more independent polymer arms, and ii) a cargo material occluded in the star polymer; and a shell comprising an inorganic material in contact with a peripheral surface of the star polymer occlusion complex.

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.

Abstract: A method of forming a material. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F1 and F2 with respect to the self-assembling block copolymer is provided. At least one crosslinkable polymer that is miscible with the second block species is provided. The self-assembling block copolymer and the at least one crosslinkable polymer are combined to form a mixture. The mixture having a volume fraction, F3, of the crosslinkable polymer, a volume fraction, F1A, of the first block species, and a volume fraction, F2A, of the second block species is formed. A material having a predefined morphology where the sum of F2A and F3 were preselected is formed.

Abstract: A composition of matter comprising an amphiphilic star polymer, the star polymer comprising a crosslinked microgel core and 6 or more independent polymer arms covalently linked to the core, the 6 or more arms each comprising a hydrophilic polymer chain segment and a hydrophobic polymer chain segment; wherein each individual metal selected from the group consisting of beryllium, magnesium, calcium, strontium, barium, radium, aluminum, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth, tellurium, polonium, and metals of Groups 3 to 12 of the Periodic Table has a concentration in the star polymer of greater than or equal to 0 parts per million and less than or equal to 100 parts per million.

Abstract: Compositions are disclosed having the formula (3): [C?]k[Ta(O2)x(L?)y]??(3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L?)y has a charge of 0 to ?3, C? is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L? is an oxidatively stable organic ligand having a charge of 0 to ?4, and L? comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

Abstract: The present invention relates to compositions comprising poly-oxycarbosilane and methods for using the compositions in step and flash imprint lithography. The imprinting compositions comprise a poly-oxycarbosilane polymer, a silanol, a reaction initiator and optionally a pore generator.

Abstract: A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; and one or more polymerizable diluents, the diluents constituting at least 50% by weight of the composition.

Abstract: A composition of matter for a recording medium in atomic force data storage devices. The composition includes one or more poly(aryl ether ketone) copolymers, each of the one or more poly(aryl ether ketone) copolymers including (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, the moiety capable of forming two or more hydrogen bonds at room temperature, each of the one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety. The covalent and hydrogen bonding cross-linking of the poly(aryl ether ketone) oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone polymers, each of the one or more polyaryletherketone polymers having two terminal ends, each terminal end having two or more phenylethynyl moieties. The one or more polyaryletherketone polymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layers in atomic force data storage devices.

Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

Abstract: Compositions are disclosed having the formula (3): [C?]k[Ta(O2)x(L?)y]??(3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L?)y has a charge of 0 to ?3, C? is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L? is an oxidatively stable organic ligand having a charge of 0 to ?4, and L? comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

Abstract: Nanoparticles in a colloid are purified, with the colloid including a fluid, unwanted matter, and the nanoparticles to be purified. An electric field is applied that is substantially spatially uniform over a distance that is at least equal to a characteristic dimension of the nanoparticles, so that at least some of the nanoparticles move towards at least one collection surface as a result of the force arising between their electrical charge and the electric field, whereupon nanoparticles are collected on said at least one collection surface. The collection surface(s) may be one or more electrodes to which a voltage potential is applied. The collected nanoparticles are then removed from the collection surface, e.g., by dispersing them into another fluid.