Patents by Inventor Robert Douglas Mohondro

Robert Douglas Mohondro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6803319
    Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: October 12, 2004
    Assignee: Axcelis Technologies, Inc.
    Inventors: Alan C. Janos, Anthony Sinnot, Ivan Berry, Kevin Stewart, Robert Douglas Mohondro
  • Publication number: 20030180976
    Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.
    Type: Application
    Filed: February 18, 2003
    Publication date: September 25, 2003
    Inventors: Alan C. Janos, Anthony Sinnot, Ivan Berry, Kevin Stewart, Robert Douglas Mohondro
  • Patent number: 6605484
    Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: August 12, 2003
    Assignee: Axcelis Technologies, Inc.
    Inventors: Alan C. Janos, Anthony Sinnot, Ivan Berry, Kevin Stewart, Robert Douglas Mohondro
  • Patent number: 6503693
    Abstract: A process for altering exposed and developed photoresist features. The photoresist features are exposed to at least one compound that will react with at least one of itself and at least one component of the photoresist. The reaction takes place in the presence of at least one component of the photoresist. The photoresist features are exposed to reaction-initiating energy during at least one time selected from the group consisting of prior to, simultaneous with and subsequent to exposing the photoresist features to the at least one compound.
    Type: Grant
    Filed: December 2, 1999
    Date of Patent: January 7, 2003
    Assignee: Axcelis Technologies, Inc.
    Inventors: Robert Douglas Mohondro, John Scott Hallock
  • Patent number: 6417115
    Abstract: A method of treating a dielectric material deposited on a substrate in semiconductor device manufacturing processes. The dielectric material is exposed to radiation. The dielectric material is exposed to a temperature of 20° C. or greater. The dielectric material is exposed to an atmosphere that includes at least one material selected from the group consisting of an amine, an amide, at least one aldehyde, at least one aromatic compound and N2.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: July 9, 2002
    Assignee: Axeclis Technologies, Inc.
    Inventors: Terrence Alair McDevitt, Robert Douglas Mohondro
  • Patent number: 6214524
    Abstract: A semiconductor device preparing according to a process comprising the step of photolithographic features formed in a photoresist including exposing the photoresist to at least one material selected from the group consisting of at least one amine, at least one amide, at least one aldehyde, and nitrogen.
    Type: Grant
    Filed: May 12, 1999
    Date of Patent: April 10, 2001
    Assignee: Fusion Systems Corporation
    Inventor: Robert Douglas Mohondro
  • Patent number: 6117622
    Abstract: A process for controlled shrinkage of photolithographic features formed in photoresist. A shrinkage profile is determined for the photoresist and sizes of the photolithographic features. The photoresist is then exposed to ultraviolet radiation and elevated temperature until the photolithographic features shrink a desired amount.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: September 12, 2000
    Assignee: Fusion Systems Corporation
    Inventors: Jeffrey Allan Eisele, Robert Douglas Mohondro
  • Patent number: 6057084
    Abstract: A process for reducing shrinkage of photolithographic features formed in a photoresist including exposing the photoresist to at least one material selected from the group consisting of at least one amine, at least one amide, at least one aldehyde, and nitrogen.
    Type: Grant
    Filed: October 3, 1997
    Date of Patent: May 2, 2000
    Assignee: Fusion Systems Corporation
    Inventor: Robert Douglas Mohondro