Patents by Inventor Robert Dwili?ski

Robert Dwili?ski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk nitride mono-crystal including substrate for epitaxy
    Patent number: 7420261
    Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 ?m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0-?m thick and its surface dislocation density is less than 106/cm2.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: September 2, 2008
    Assignees: AMMONO Sp. z o.o., Nichia Corporation
    Inventors: Robert Dwiliński, Roman Doradziński, Jerzy Garczynski, Leszek P. Sierzputowski, Yasuo Kanbara
  • Bulk nitride mono-crystal including substrate for epitaxy
    Patent number: 7132730
    Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 ?m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 ?m thick and its surface dislocation density is less than 106/cm2.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: November 7, 2006
    Assignees: Ammono Sp. z.o.o., Nichia Corporation
    Inventors: Robert Dwiliński, Roman Doradziński, Jerzy Garczyński, Leszek P. Sierzputowski, Yasuo Kanbara