Abstract: Embodiments of the present disclosure may relate to a data storage controller that may include a non-volatile memory, and a processor coupled with the non-volatile memory to perform a scan of a plurality of non-volatile memory dies in a multi-die memory package to detect one or more defective non-volatile memory dies, where an individual non-volatile memory die of the plurality of non-volatile memory dies is defective if the individual non-volatile memory die has a number of bad blocks that exceeds a predefined threshold, and store one or more defective die indicators in a die topology in the non-volatile memory based at least in part on the scan, where the one or more defective die indicators correspond to the one or more defective non-volatile memory dies. Other embodiments may be described and/or claimed.

Abstract: Embodiments include apparatuses, method, and systems for organizing individual memory dice of a memory device into a plurality of virtual dice and designating one of the virtual dice of the memory device for storage of redundancy information. In one embodiment, a memory controller includes memory allocation logic to organize memory resources of individual memory dice of a memory device into a plurality of virtual dice, including a redundancy virtual die for storing redundancy information and a plurality of data virtual dice for storing data. The memory controller may further include input/output logic to write data to the data virtual dice of the non-volatile memory device, and redundancy information logic to generate redundancy information based on the data and to write the redundancy information to the redundancy virtual die of the non-volatile memory device.

Abstract: Provided are a method, apparatus, and a system for measuring latency of a storage device. The storage device measures one or more latencies of one or more input/output (I/O) operations received from a host. The storage device transmits information on the one or more latencies to the host.

Abstract: Provided are a method, apparatus, and a system for measuring latency of a storage device. The storage device measures one or more latencies of one or more input/output (I/O) operations received from a host. The storage device transmits information on the one or more latencies to the host.

Abstract: Embodiments include apparatuses, method, and systems for organizing individual memory dice of a memory device into a plurality of virtual dice and designating one of the virtual dice of the memory device for storage of redundancy information. In one embodiment, a memory controller includes memory allocation logic to organize memory resources of individual memory dice of a memory device into a plurality of virtual dice, including a redundancy virtual die for storing redundancy information and a plurality of data virtual dice for storing data.

Abstract: A method and system to improve the performance of a multi-level cell (MLC) NAND flash memory. In one embodiment of the invention, the metadata associated with the data stored in a MLC NAND flash memory is stored only in one or more lower pages of the MLC NAND flash memory. The MLC NAND flash memory has lower and upper pages, where the lower pages have a faster programming time or rate than the upper pages in one embodiment of the invention. By storing the metadata only in the pages of the MLC NAND flash memory that have low latencies of programming, the quality of service (QoS) of the MLC NAND flash memory can be improved.

Abstract: A method and system to improve the performance of a multi-level cell (MLC) NAND flash memory. In one embodiment of the invention, the metadata associated with the data stored in a MLC NAND flash memory is stored only in one or more lower pages of the MLC NAND flash memory. The MLC NAND flash memory has lower and upper pages, where the lower pages have a faster programming time or rate than the upper pages in one embodiment of the invention. By storing the metadata only in the pages of the MLC NAND flash memory that have low latencies of programming, the quality of service (QoS) of the MLC NAND flash memory can be improved.