Abstract: This invention describes a low resistance contact structure to n-type GaAs and a method for making such a contact structure. The contact structure is formed by depositing successive layers of Ni, Au, Ge, and Ni. A fifth layer is then deposited on the first four layers. The fifth layer is a metallic tungsten oxide. The metallic tungsten oxide is formed by sputtering tungsten onto the 4 layer stack in a low pressure argon plus oxygen atmosphere. The resulting 5 layer stack is then annealed in a rapid thermal anneal (RTA) process. The RTA process heats the stack for 5 seconds at 600 degrees. The resulting structure consists of an intermetallic NiGe compound having a small amount of a AuGa compound dispersed within it and being covered by a metallic tungsten oxide film. The oxygen from the metallic tungsten oxide film acts as a gettering mechanism to create gallium vacancies in the GaAs lattice structure during the RTA process.

Abstract: This invention describes a low resistance contact structure to n-type GaAs and a method for making such a contact structure. The contact structure is formed by depositing successive layers of Ni, Au, Ge, and Ni. A fifth layer is then deposited on the first four layers. The fifth layer is a metallic tungsten oxide. The metallic tungsten oxide is formed by sputtering tungsten onto the 4 layer stack in a low pressure argon plus oxygen atmosphere. The resulting 5 layer stack is then annealed in a rapid thermal anneal (RTA) process. The RTA process heats the stack for 5 seconds at 600 degrees. The resulting structure consists of an intermetallic NiGe compound having a small amount of a AuGa compound dispersed within it and being covered by a metallic tungsten oxide film. The oxygen from the metallic tungsten oxide film acts as a gettering mechanism to create gallium vacancies in the GaAs lattice structure during the RTA process.

Abstract: Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.

Abstract: Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.

Abstract: Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.