Abstract: A method of switching a magnetic orientation of at least one of a plurality of magnetic memory elements in a magnetic random access device can include coupling a sense line to the at least one of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and utilizing the sense line to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.

Abstract: An optical apparatus includes a substrate comprising a layer of thermally insulating material disposed thereon; an optical resonator disposed on the layer of thermally insulating material; and a trench in the thermally insulating material disposed around at least a portion of the optical resonator. The optical resonator is substantially thermally isolated from the substrate.

Abstract: A ring resonator has a first optical waveguide arranged in a loop, a second optical waveguide tangentially optically coupled to the first optical waveguide, and a translatable body configured to selectively move into an evanescent field region of said first optical waveguide.

Abstract: Various systems and methods for sensing are provided. In one embodiment, a sensing system is provided that includes a first electrode array disposed on a proof mass, and a second electrode array disposed on a planar surface of a support structure. The proof mass is attached to the support structure via a compliant coupling such that the first electrode array is positioned substantially parallel to and faces the second electrode array, where the proof mass is capable of displacement relative to the support structure. The displacement of the proof mass is in a direction substantially parallel to the second electrode array. The first electrode array comprises a plurality of first patterns of electrodes, the first patterns being interdigitated, and each of the first patterns comprises at least two first electrodes. The second electrode array comprises a plurality of second patterns of electrodes, the second patterns being interdigitated.

Abstract: Various systems and methods for sensing are provided. In one embodiment, a sensing system is provided that includes a first electrode array disposed on a proof mass, and a second electrode array disposed on a planar surface of a support structure. The proof mass is attached to the support structure via a compliant coupling such that the first electrode array is positioned substantially parallel to and faces the second electrode array, where the proof mass is capable of displacement relative to the support structure. The displacement of the proof mass is in a direction substantially parallel to the second electrode array. The first electrode array comprises a plurality of first patterns of electrodes, the first patterns being interdigitated, and each of the first patterns comprises at least two first electrodes. The second electrode array comprises a plurality of second patterns of electrodes, the second patterns being interdigitated.

Abstract: An aspect of the present invention is an MRAM device. The MRAM device includes a plurality of magnetic memory elements, a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of each of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and wherein the sense line is utilized to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.

Abstract: A contact lithography system includes a patterning tool for transferring a pattern to a substrate; and a capacitive alignment system disposed on the patterning tool for cooperating with a corresponding alignment system disposed on the substrate for determining relative alignment of the patterning tool and substrate. A method of aligning a patterning tool and a substrate in a contact lithography system includes determining, based on a signal transferred through capacitors formed by opposing conductive elements disposed respectively on the patterning tool and substrate, alignment of the patterning tool and substrate.

Abstract: The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.

Abstract: Micromachine systems are provided. An embodiment of such a micromachine system includes a substrate that defines a trench. First and second microelectromechanical devices are arranged at least partially within the trench. Each of the microelectromechanical devices incorporates a first portion that is configured to move relative to the substrate. Methods also are provided.

Abstract: A data storage device includes a storage medium and a contact probe. The storage medium includes a first polymeric layer, and a second polymeric layer on the first polymeric layer. The first polymeric layer is electrically conductive. The contact probe faces the second polymeric layer.

Abstract: A molecular system is provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises the molecular system, which has an electric field induced band gap change, and thus a change in its electrical conductivity, that occurs via one a molecular conformation change, based on a rotor/stator construction of the molecular system, involving a rotating portion (rotor) connected between to stationary portions (stators). Nanometer-scale reversible electronic switches are thus provided that can be assembled easily to make cross-bar circuits, which provide memory, logic, and communication functions.

Abstract: A movable system, such as a computer storage device, having a frame, a mover configured to move relative to the frame, and a mechanical suspension operatively coupled between the frame and mover. The mechanical suspension is configured to permit planar movement of the mover while substantially preventing out-of-plane movement, and includes a first flexure configured to flex in response to movement of the mover in a first direction relative to the frame, and a second flexure configured to flex in response to relative movement occurring in a second direction.

Abstract: A data storage device includes a storage medium and a contact probe. The storage medium includes a first polymeric layer, and a second polymeric layer on the first polymeric layer. The first polymeric layer is electrically conductive. The contact probe faces the second polymeric layer.

Abstract: A molecular system is provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises the molecular system, which has an electric field induced band gap change, and thus a change in its electrical conductivity, that occurs via one a molecular conformation change, based on a rotor/stator construction of the molecular system, involving a rotating portion (rotor) connected between to stationary portions (stators). Nanometer-scale reversible electronic switches are thus provided that can be assembled easily to make cross-bar circuits, which provide memory, logic, and communication functions.

Abstract: Micromachine systems are provided. An embodiment of such a micromachine system includes a substrate that defines a trench. First and second microelectromechanical devices are arranged at least partially within the trench. Each of the microelectromechanical devices incorporates a first portion that is configured to move relative to the substrate. Methods also are provided.

Abstract: A molecular system is provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises the molecular system, which has an electric field induced band gap change, and thus a change in its electrical conductivity, that occurs via one a molecular conformation change, based on a rotor/stator construction of the molecular system, involving a rotating portion (rotor) connected between to stationary portions (stators). Nanometer-scale reversible electronic switches are thus provided that can be assembled easily to make cross-bar circuits, which provide memory, logic, and communication functions.

Abstract: A movable system, such as a computer storage device, having a frame, a mover configured to move relative to the frame, and a mechanical suspension operatively coupled between the frame and mover. The mechanical suspension is configured to permit planar movement of the mover while substantially preventing out-of-plane movement, and includes a first flexure configured to flex in response to movement of the mover in a first direction relative to the frame, and a second flexure configured to flex in response to relative movement occurring in a second direction.

Abstract: Micromachine systems are provided. An embodiment of such a micromachine system includes a substrate that defines a trench. First and second microelectromechanical devices are arranged at least partially within the trench. Each of the microelectromechanical devices incorporates a first portion that is configured to move relative to the substrate. Methods also are provided.

Abstract: A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.

Abstract: Micromachine systems are provided. An embodiment of such a micromachine system includes a substrate that defines a trench. First and second microelectromechanical devices are arranged at least partially within the trench. Each of the microelectromechanical devices incorporates a first portion that is configured to move relative to the substrate. Methods also are provided.