Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: System and methods for displaying one or more assets on a client device based on device characteristics are provided. Code is transmitted to a client device. The code, when executed by the client device, causes a processor of the client device to determine a first device characteristic of the client device. A first layout may be selected based on the first device characteristic. The layout may include one or more cards. Each card may correspond to one or more assets. Each card may be modified based on a corresponding card characteristic. One or more assets may be requested. The assets may be displayed on the first client device. The code may be transmitted to another client device, which may select a different layout based on a different device characteristic.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: System and methods for displaying one or more assets on a client device based on device characteristics are provided. Code is transmitted to a client device. The code, when executed by the client device, causes a processor of the client device to determine a first device characteristic of the client device. A first layout may be selected based on the first device characteristic. The layout may include one or more cards. Each card may correspond to one or more assets. Each card may be modified based on a corresponding card characteristic. One or more assets may be requested. The assets may be displayed on the first client device. The code may be transmitted to another client device, which may select a different layout based on a different device characteristic.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: A pipe handling apparatus and method for using the pipe handling apparatus is described. The pipe handling apparatus can be used by putting a boom of the pipe handling apparatus in a nesting position. The boom of the pipe handling apparatus is pivotally mounted to a base and at least one arm. In the nesting position, a pivot point between the at least one arms and the boom is moved within an elongated slot of the boom and the length of the at least one arm is simultaneously adjusted.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a alkoxysilacyclic or acyloxysilacyclic compound with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: Fluid collection apparatuses and methods of use in negative pressure therapies are provided.

Abstract: A multilayer fabric for selectively blocking or transmitting particular wavelengths in the electromagnetic spectrum, such solar radiation, and far infrared (FIR) radiation. The multilayer fabric may include a microporous water vapor permeable layer that selectively filters particular wavelengths depending on the size of its pores. In some embodiments, the multilayer fabric may include a nanostructured layer that selectively filters particular wavelengths.

Abstract: An In-Vehicle Active Traffic Management Information System (IVATMIS) that provides vehicles with messages derived from non-DMS and non-ADMS sources. IVATMIS receives, develops, and prioritizes the messages from these sources to provide suitable message streams to drivers of manually-driven vehicles and to self-driving vehicles that represents the indications on traffic Active Traffic Management device (ATM) deployments on freeways and bridges. The messages include and/or use information obtained from a traffic management center or from a source whose information originates from a traffic management center for ATM traffic management devices other than DMS and ADMS. The messages may include descriptions of traffic events and traffic conditions from Lane Control Signals, Variable Speed Limit Signs, dynamic lane markings, and dynamic toll rate information.

Abstract: Methods and devices are described for performing at least one of enhancing female sexual arousal, enhancing female sexual pleasure, or enhancing an ability to achieve or experience a more pleasurable orgasm for a female. In some cases, an acoustic wave stimulus is combined with one or more of providing a suction stimulus and a vibration stimulus as this may be further beneficial to the female.

Abstract: A multilayer fabric for selectively blocking or transmitting particular wavelengths in the electromagnetic spectrum, such solar radiation, and far infrared (FIR) radiation. The multilayer fabric may include a microporous water vapor permeable layer that selectively filters particular wavelengths depending on the size of its pores. In some embodiments, the multilayer fabric may include a nanostructured layer that selectively filters particular wavelengths.

Abstract: A retaining wall can include wall blocks positioned to retain material against a rear side of the wall blocks. A method for supporting such a retaining wall method includes attaching at least one of the wall blocks to at least one ground-stabilizing base body supporting the wall blocks. The ground-stabilizing base body can include a flexible cable attached to the rear side of at least one of the wall blocks and to a portion extending rearward away from the rear side of at least one of the wall blocks.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane; and applying energy to the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane in the reaction chamber to induce reaction of the gaseous composition comprising 1-methyl-1-iso-propoxy-silacyclopentane or 1-methyl-1-iso-propoxy-silacyclobutane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from 2.70 to 3.20, an elastic modulus of from 11 to 25 GPa, and an at. % carbon of from 12 to 31 as measured by XPS.

Abstract: Methods and devices are described for performing at least one of enhancing female sexual arousal, enhancing female sexual pleasure, or enhancing an ability to achieve or experience a more pleasurable orgasm for a female. In some cases, an acoustic wave stimulus is combined with one or more of providing a suction stimulus and a vibration stimulus as this may be further beneficial to the female.

Abstract: A pad for a garment includes a one piece structure comprising interconnected elements made from a compressible material. The elements are arranged such that, when the pad is in a non-deformed state, each element is spaced apart from adjacent elements by a void. The elements are interconnected such that, when the pad is deformed, a zigzag arrangement of at least three elements is formed and/or a void enclosed by at least two adjacent elements expands.

Abstract: A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.