Abstract: A heating system for heating a substrate. The heating system may include a susceptor, where the susceptor has a substrate support surface. The heating system may further include a heat transfer layer, disposed on the substrate support surface, where the heat transfer layer comprising an array of aligned carbon nanotubes.

Abstract: In one embodiment a vacuum assembly for an ion implanter system includes a first turbomolecular pump operatively coupled to a source chamber of the ion implanter system and a first backing line having a first end and a second end, the first end coupled to an exhaust port of the first turbomolecular pump, wherein the first turbomolecular pump and first end of the first backing line are configured to operate at a voltage potential of the source chamber. The vacuum assembly further includes a voltage insulator that is insulatively coupled to the first backing line, and a second turbomolecular pump operatively coupled to the first backing line, wherein the second turbomolecular pump is configured to operate at ground voltage potential.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: A valve includes a gate and an actuator. The gate has a gate opening with a first seal fixed to the gate and positioned along a periphery of the gate opening. The gate also has a blocking portion with a second seal fixed to the gate and positioned along a periphery of the blocking portion. The actuator is configured to move the gate between an open position and a closed position, wherein the gate opening is aligned to a chamber opening in a chamber wall and the first seal engages a sealing surface of the chamber wall in the open position and wherein the blocking portion is aligned to the opening in the chamber wall and the second seal engages the sealing surface of the chamber wall in the closed position. The valve is capable of operating in harsh environments.

Abstract: In one embodiment a vacuum assembly for an ion implanter system includes a first turbomolecular pump operatively coupled to a source chamber of the ion implanter system and a first backing line having a first end and a second end, the first end coupled to an exhaust port of the first turbomolecular pump, wherein the first turbomolecular pump and first end of the first backing line are configured to operate at a voltage potential of the source chamber. The vacuum assembly further includes a voltage insulator that is insulatively coupled to the first backing line, and a second turbomolecular pump operatively coupled to the first backing line, wherein the second turbomolecular pump is configured to operate at ground voltage potential.

Abstract: An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components.

Abstract: A valve includes a gate and an actuator. The gate has a gate opening with a first seal fixed to the gate and positioned along a periphery of the gate opening. The gate also has a blocking portion with a second seal fixed to the gate and positioned along a periphery of the blocking portion. The actuator is configured to move the gate between an open position and a closed position, wherein the gate opening is aligned to a chamber opening in a chamber wall and the first seal engages a sealing surface of the chamber wall in the open position and wherein the blocking portion is aligned to the opening in the chamber wall and the second seal engages the sealing surface of the chamber wall in the closed position. The valve is capable of operating in harsh environments.