Patents by Inventor Robert Huggare

Robert Huggare has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11802338
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: October 31, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Robert Huggare
  • Patent number: 11549177
    Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: January 10, 2023
    Assignee: ASM INTERNATIONAL, N.V.
    Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
  • Publication number: 20200181769
    Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.
    Type: Application
    Filed: December 10, 2019
    Publication date: June 11, 2020
    Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
  • Publication number: 20200173020
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Application
    Filed: February 7, 2020
    Publication date: June 4, 2020
    Inventor: Robert Huggare
  • Patent number: 10590535
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: March 17, 2020
    Assignee: ASM IP Holdings B.V.
    Inventor: Robert Huggare
  • Patent number: 10513772
    Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: December 24, 2019
    Assignee: ASM International N.V.
    Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
  • Publication number: 20190032209
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Application
    Filed: July 26, 2017
    Publication date: January 31, 2019
    Inventor: Robert Huggare
  • Publication number: 20120269962
    Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.
    Type: Application
    Filed: October 14, 2010
    Publication date: October 25, 2012
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux