Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: The present invention is directed to an apparatus and process for filtering light in a thermal processing chamber. In particular, the apparatus of the present invention includes a first spectral filter spaced apart from a second spectral filter. The first spectral filter is spaced apart from the second spectral filter so as to define a cooling fluid channel therebetween through which a cooling fluid can be circulated. In order to prevent thermal radiation being emitted by the light source from interfering with the operation of a radiation sensing device contained in the chamber, the first spectral filter absorbs most of the thermal radiation being emitted by the light source at the operating wavelength of the radiation sensing device. The second spectral filter, on the other hand, is substantially transparent to thermal radiation at the operating wavelength of the radiation sensing device.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. Through this method, the emissivity of the wafer has only a minor influence on the calculated temperature.

Abstract: A surface contamination monitor which discriminates between different types of surface contamination and irregularities is provided with a horizontal sensing plate, a light detector positioned under the plate, a narrow bandpass filter disposed between the plate and the detector, and optical lenses. At one end of the sensing plate is included three laser diodes, while at the other end is located a coupling prism. Beams from the laser diodes strike the coupling prism and are directed at different angles so as to either strike the exposed surface of the sensing plate or become trapped within the sensing plate. Variations in the reactions of the different beams to different contaminants and irregularities on the exposed sensing plate surface allow the light detector to discriminate between dust, molecular films , and scratches and craters on the exposed surface.

Abstract: An apparatus (10) for identifying molecular contamination in an environment includes a pair of crystals (12, 14) supported within supports (16, 18, 20) which are cantilevered to a base (44) by standoffs (36). Base is housed within an enclosure (56) which opens through an opening (54) to an environment to be tested. Contaminants from the environment are deposited on sensing crystal (12) which, after a build up of the contaminants thereon, is heated by a heater. Through a thermo-gravimetric analysis, the points at which contaminants on crystal (12) sublime provide a means for identifying the contaminants.

Abstract: Apparatus and method for preventing the escape of contaminates outgassing from polymer materials within an enclosure. In an illustrative embodiment the invention provides an exhaust path for an electronic enclosure 10 containing polymeric materials (12,14). The exhaust path comprises a tubular member 16 which permits the atmospheric gases within the enclosure to escape from the enclosure during liftoff. Within the member are at least one region 26 containing an ionizing source, such as a radioactive substance which emits alpha particles. These alpha particles are relatively low energy particles and are stopped by a relatively thin layer of material. The radiation polymerizes, into a solid surface film 30 outgassing molecular species 28 as they traverse the inner region of the member. The use of the invention provides for permitting the atmospheric gasses within the enclosure to escape the enclosure during the initial ascent and, further, serves as a pathway and removal device for molecular contaminates.

Abstract: Method and apparatus are disclosed for automatically and remotely removing unwanted organic films from surfaces of vehicles and satellites in space. A particle beam generator (12) draws molecular oxygen from an on-board supply chamber (14) and develops a stream of positively charged oxygen ions (40). These ions are directed towards a surface or component of a spacecraft such as a solar cell, radiation emission aperture, or sensor objective lens (44) which has been coated by an opacifying, organic contaminant layer (42) that impairs the efficacy of the spacecraft. The ions (40) bombard the contaminant layer (42) and remove it by both kinetic interaction and chemical oxidation. Spacecraft surfaces and components may be restored and renewed to their original operational capabilities through this method of volatilizing debilitating occluding residues which have been hardened by solar radiation away from the spacecraft as harmless gases (50).

Abstract: Contamination, either in the form of particulate matter (46), e.g., dust and non-wetting liquid, or surface discontinuities (48), such as a smooth film or cratering, is collected on an explosed glass plate (12). Illumination at an angle incident with respect to a surface (14) of the glass plate causes the particulate matter to scatter light. A further light source illuminates the inside volume of the glass, causing light to scatter from the surface discontinuities. Either source of light scattering is detected by an optically sensitive detector (18) positioned beneath the glass plate. A bandpass filter (24) between the glass plate and the detector rejects spurious radiation.