Patents by Inventor Robert J. Lender, Jr.
Robert J. Lender, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9742445Abstract: A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and Ka-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.Type: GrantFiled: July 1, 2016Date of Patent: August 22, 2017Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert Actis, Robert J. Lender, Jr., Jared P. Majcher, John R. Muir, Edwin C. Powers
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Patent number: 9537605Abstract: An ultra-wideband high-power solid-state transmitter for electronic warfare applications which includes a plurality of wideband Gallium-Nitride (GaN) semiconductor monolithic-microwave integrated circuits (MMICs), a spatial power combiner to sum the aggregate contribution of the MMICs, a wide bandwidth small form factor driver amplifier module to supply the required gain in the transmitter, and a thermal management system.Type: GrantFiled: July 22, 2015Date of Patent: January 3, 2017Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert Actis, Robert J. Lender, Jr., Virginia W. Murray, Edwin C. Powers
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Patent number: 9083291Abstract: A low voltage, switch mode PHEMT power amplifier with a 0.1 ?m gate length and a low loss, lumped element, output matching circuit is disclosed that provides high performance over a frequency range of 1.4 GHz-2.5 GHz. The amplifier makes use of monolithic circuit technology for the first stage and output transistor, and uses a printed circuit board with surface mount components for the output matching network. The power output of the power amplifier is stable over a range of 60 degrees centigrade, has high power efficiencies of 44-53% with greater than 2 watts output power over the frequency range of 1.4 GHz and 2.5 GHz. In addition, through drain voltage control, the output power can be varied over a wide range between about 0.8 to 2.5 watts while still maintaining a high efficiency in the range of 50±3%.Type: GrantFiled: August 12, 2012Date of Patent: July 14, 2015Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert J. Lender, Jr., Douglas M. Dugas
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Patent number: 9024326Abstract: In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.Type: GrantFiled: July 18, 2012Date of Patent: May 5, 2015Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert Actis, Pane-chane Chao, Robert J. Lender, Jr., Kanin Chu, Bernard J. Schmanski, Sue May Jessup
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Patent number: 8989683Abstract: Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package.Type: GrantFiled: March 15, 2013Date of Patent: March 24, 2015Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert Actis, Robert J. Lender, Jr., Steven Rajkowski, Bernard J. Schmanski
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Patent number: 8669812Abstract: A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.Type: GrantFiled: January 28, 2011Date of Patent: March 11, 2014Assignee: Schilmass Co., L.L.C.Inventors: Robert Actis, Robert J. Lender, Jr., Steve M. Rajkowski, Kanin Chu, Blair E. Coburn
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Publication number: 20130341644Abstract: In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.Type: ApplicationFiled: July 18, 2012Publication date: December 26, 2013Applicant: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert Actis, Pane-chane Chao, Bernard J. Schmanski, Anthony A. Immorlica, Kanin Chu, Robert J. Lender, JR., Dong Xu, Sue May Jessup
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Publication number: 20130321087Abstract: A low voltage, switch mode PHEMT power amplifier with a 0.1 ?m gate length and a low loss, lumped element, output matching circuit is disclosed that provides high performance over a frequency range of 1.4 GHz-2.5 GHz. The amplifier makes use of monolithic circuit technology for the first stage and output transistor, and uses a printed circuit board with surface mount components for the output matching network. The power output of the power amplifier is stable over a range of 60 degrees centigrade, has high power efficiencies of 44-53% with greater than 2 watts output power over the frequency range of 1.4 GHz and 2.5 GHz. In addition, through drain voltage control, the output power can be varied over a wide range between about 0.8 to 2.5 watts while still maintaining a high efficiency in the range of 50±3%.Type: ApplicationFiled: August 12, 2012Publication date: December 5, 2013Applicant: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert J. Lender, JR., Douglas M. Dugas
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Patent number: 8576009Abstract: A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.Type: GrantFiled: December 12, 2011Date of Patent: November 5, 2013Assignee: Schilmass Co. L.L.C.Inventors: Robert J. Lender, Jr., Robert Actis
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Publication number: 20120268213Abstract: A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.Type: ApplicationFiled: January 28, 2011Publication date: October 25, 2012Applicant: BAE SYSTEMS Information & Electronic Systems Integration Inc.Inventors: Robert Actis, Robert J. Lender, JR., Steve M. Rajkowski, Kanin Chu, Blair E. Coburn
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Publication number: 20120081182Abstract: A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.Type: ApplicationFiled: December 12, 2011Publication date: April 5, 2012Applicant: BAE SYSTEMS Information & Electronic Systems Integration, Inc.Inventors: Robert J. Lender, JR., Robert Actis
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Patent number: 8076975Abstract: A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.Type: GrantFiled: April 6, 2011Date of Patent: December 13, 2011Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert J. Lender, Jr., Robert Actis
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Patent number: 7924097Abstract: A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.Type: GrantFiled: November 1, 2005Date of Patent: April 12, 2011Assignee: BAE Systems Information and Electronic Systems Integration Inc.Inventors: Robert J. Lender, Jr., Robert Actis
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Publication number: 20090309659Abstract: A number of identical non-uniformly distributed ultra-wideband power amplifier string building blocks are coupled together to form an ultra-wide bandwidth high-power amplifier. The non-uniform distribution results in an amplifier utilizing modular string building blocks that have input and output impedances with only real values. This permits the strings to be replicated and connected together with simple impedance matching. The internal impedance matching associated with the non-linear distribution also absorbs parasitic capacitance to permit the ultra-broadband operation. In one embodiment identical transistors are used for each cell so that the strings may be identically replicated. This permits modular re-use without reconfiguration. In one embodiment a non-uniform distributed power amplifier built using the subject building blocks provides an ultra-wideband multi-octave device suitable for electronic warfare and communications applications, especially to replace traveling wave tubes.Type: ApplicationFiled: November 1, 2005Publication date: December 17, 2009Inventors: Robert J. Lender, JR., Robert Actis