Patents by Inventor Robert John Wilby

Robert John Wilby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for investigating parameters of layers deposited on semiconductor wafers
    Patent number: 7340372
    Abstract: In order to determine the dielectric constant of a layer deposited on a semiconductor wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: March 4, 2008
    Assignee: Metryx Limited
    Inventor: Robert John Wilby
  • Apparatus and method for investigating semiconductors wafer
    Patent number: 7020577
    Abstract: In order to determine the dielectric constant of a layer deposited on a semiconducotr wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: March 28, 2006
    Assignee: Metryx Limited
    Inventor: Robert John Wilby
  • Methods and apparatus for forming a film on a substrate
    Publication number: 20040056356
    Abstract: This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
    Type: Application
    Filed: July 15, 2003
    Publication date: March 25, 2004
    Inventors: John MacNeil, Robert John Wilby, Knut Beekman
  • Methods and apparatus for forming a film on a substrate
    Patent number: 6627535
    Abstract: This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
    Type: Grant
    Filed: January 17, 2001
    Date of Patent: September 30, 2003
    Assignee: Trikon Holdings Ltd.
    Inventors: John MacNeil, Robert John Wilby, Knut Beekman
  • Apparatus and method for investigating semiconductors wafer
    Publication number: 20030141572
    Abstract: In order to determine the dielectric constant of a layer deposited on a semiconducotr wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
    Type: Application
    Filed: January 3, 2003
    Publication date: July 31, 2003
    Inventor: Robert John Wilby
  • Methods and apparatus for forming a film on s substrate
    Publication number: 20010030369
    Abstract: This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k≦3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
    Type: Application
    Filed: January 17, 2001
    Publication date: October 18, 2001
    Inventors: John MacNeil, Robert John Wilby, Knut Beekman