Abstract: A brachytherapy ring applicator, kit, and method of use is provided. The brachytherapy ring applicatory includes a tandem, ring colpostat, and a bracket assembly. The tandem has a connector on a proximal end of the tandem and a treatment end on a distal end. The ring colpostat includes a ring member on a distal end of the ring colpostat. The bracket assembly is configured to be locked to both a shaft of the tandem and to a shaft of the ring colpostat such that the distal end of the tandem is firmly maintained in a fixed position relative to the distal end of the ring colpostat, and each of the tandem and the colpostat are entirely self-supporting from the bracket assembly to their distal ends.

Abstract: A brachytherapy ring applicator, kit, and method of use is provided. The brachytherapy ring applicatory includes a tandem, ring colpostat, and a bracket assembly. The tandem has a connector on a proximal end of the tandem and a treatment end on a distal end. The ring colpostat includes a ring member on a distal end of the ring colpostat. The bracket assembly is configured to be locked to both a shaft of the tandem and to a shaft of the ring colpostat such that the distal end of the tandem is firmly maintained in a fixed position relative to the distal end of the ring colpostat, and each of the tandem and the colpostat are entirely self-supporting from the bracket assembly to their distal ends.

Abstract: A coplanar die to substrate bond method wherein a plurality of die are aligned on a silicon wafer substrate in a predetermined relationship and a slurry of glass is applied to bond them together. This occurs while either on a flat or a grooved plate. When the silicon wafer substrate and the plurality of die are ready for firing, they are placed on a grooved plate so that grooves are below the glass thereby decreasing the capillary force which commonly causes overflow. With reduced overflow, the bonding can be done at a higher temperature to reduce underflow. Because there is no underflow or overflow using this process, a greater degree of coplanarity is achieved thereby making future processing steps, such as the processing of interconnect lines, much easier to perform.