Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: A pedestal for mounting semiconductor fabrication equipment within a clean room. The pedestal includes a base frame sitting on a waffle slab and utility connections. The equipment can readily be connected to the utility connections when positioned on the pedestal. The utility connections are located at the periphery of or across part of a face of the pedestal to thereby define a service area within the periphery.

Abstract: A seal is formed between two parts of a high pressured chamber by means of a rigid ring, which is formed with curved surfaces, that engage with an anvil and an enclosure part, the anvil having a similar curved projection. At least one of the engaging surfaces is coated with a soft metal e.g. silver.

Abstract: A seal is formed between two parts of a high pressured chamber by means of a rigid ring, which is formed with curved surfaces, that engage with an anvil and an enclosure part, the anvil having a similar curved projection. At least one of the engaging surfaces is coated with a soft metal e.g. silver.

Abstract: A seal is formed between two parts of a high pressured chamber by means of a rigid ring (13), which is formed with curved surfaces (17), that engage with an anvil (14) and an enclosure part (10), the anvil (14) having a similar curved projection (18). At least one of the engaging surfaces is coated with a soft metal e.g. silver.