Patents by Inventor Robert L. Coffie

Robert L. Coffie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor structure including a scandium gallium nitride back-barrier layer
    Patent number: 10367087
    Abstract: A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a substrate and a back-barrier layer disposed on the buffer layer, the back-barrier layer including scandium gallium nitride (ScxGa1-xN). The transistor structure may further include a channel layer disposed on the back-barrier layer, and a barrier layer disposed on the channel layer. The barrier layer may include at least one of aluminum gallium nitride, indium gallium aluminum nitride, scandium aluminum nitride, scandium aluminum gallium nitride, or indium gallium boron aluminum nitride. The transistor structure may be incorporated into a high electron mobility transistor (HEMT).
    Type: Grant
    Filed: September 9, 2018
    Date of Patent: July 30, 2019
    Inventor: Robert L. Coffie
  • Transistor Structure Including a Scandium Gallium Nitride Back-barrier Layer
    Publication number: 20190006502
    Abstract: A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a substrate and a back-barrier layer disposed on the buffer layer, the back-barrier layer including scandium gallium nitride (ScxGa1-xN). The transistor structure may further include a channel layer disposed on the back-barrier layer, and a barrier layer disposed on the channel layer. The barrier layer may include at least one of aluminum gallium nitride, indium gallium aluminum nitride, scandium aluminum nitride, scandium aluminum gallium nitride, or indium gallium boron aluminum nitride. The transistor structure may be incorporated into a high electron mobility transistor (HEMT).
    Type: Application
    Filed: September 9, 2018
    Publication date: January 3, 2019
    Inventor: Robert L. Coffie
  • Transistor structure including a scandium gallium nitride back-barrier layer
    Patent number: 10109728
    Abstract: A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a substrate and a back-barrier layer disposed on the buffer layer, the back-barrier layer including scandium gallium nitride (ScxGa1-xN). The transistor structure may further include a channel layer disposed on the back-barrier layer, and a barrier layer disposed on the channel layer. The barrier layer may include at least one of aluminum gallium nitride, indium gallium aluminum nitride, scandium aluminum nitride, scandium aluminum gallium nitride, or indium gallium boron aluminum nitride. The transistor structure may be incorporated into a high electron mobility transistor (HEMT).
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: October 23, 2018
    Inventor: Robert L. Coffie
  • TRANSISTOR STRUCTURE INCLUDING A SCANDIUM GALLIUM NITRIDE BACK-BARRIER LAYER
    Publication number: 20180138303
    Abstract: A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a substrate and a back-barrier layer disposed on the buffer layer, the back-barrier layer including scandium gallium nitride (ScxGa1-xN). The transistor structure may further include a channel layer disposed on the back-barrier layer, and a barrier layer disposed on the channel layer. The barrier layer may include at least one of aluminum gallium nitride, indium gallium aluminum nitride, scandium aluminum nitride, scandium aluminum gallium nitride, or indium gallium boron aluminum nitride. The transistor structure may be incorporated into a high electron mobility transistor (HEMT).
    Type: Application
    Filed: November 8, 2017
    Publication date: May 17, 2018
    Inventor: Robert L. Coffie