Abstract: An array of interconnected memory cells for storing therein a fractional-quantum-Hall-effect droplet whose state is controllable using voltages applied to the cell electrodes. In an example embodiment, the memory cells are arranged and linked together such as to reduce the geometric size of the array, e.g., compared to that of a linear array having the same number of memory cells. For example, one or more wheel-and-spokes arrangements of the memory cells can be used for this purpose. The smaller geometric size of the array can result in better coherence across the droplet confined therein, which can advantageously be used to improve the reliability and/or performance of the corresponding quantum-computing device.

Abstract: A memory is capable of storing coupled qubits. The memory includes a plurality of memory cells, wherein each of the memory cells is for storing values of one of the qubits. The memory also includes an electronic controller electrically connected to operate said memory cells. The controller is able to selectively store a qubit value to any of the memory cells in either a first state or a second state. The controller is configured to read any one of the memory cells in a manner dependent on whether the first state or the second state was previously used to store a qubit value in the same one of the memory cells.

Abstract: An array of interconnected memory cells for storing therein a fractional-quantum-Hall-effect droplet whose state is controllable using voltages applied to the cell electrodes. In an example embodiment, the memory cells are arranged and linked together such as to reduce the geometric size of the array, e.g., compared to that of a linear array having the same number of memory cells. For example, one or more wheel-and-spokes arrangements of the memory cells can be used for this purpose. The smaller geometric size of the array can result in better coherence across the droplet confined therein, which can advantageously be used to improve the reliability and/or performance of the corresponding quantum-computing device.

Abstract: A memory is capable of storing coupled qubits. The memory includes a plurality of memory cells, wherein each of the memory cells is for storing values of one of the qubits. The memory also includes an electronic controller electrically connected to operate said memory cells. The controller is able to selectively store a qubit value to any of the memory cells in either a first state or a second state. The controller is configured to read any one of the memory cells in a manner dependent on whether the first state or the second state was previously used to store a qubit value in the same one of the memory cells.

Abstract: An apparatus includes a substrate having a planar top surface, a sequence of crystalline semiconductor layers located on the planar surface, and first and second sets of electrodes located over the sequence. The sequence of crystalline semiconductor layers has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border first and second channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are located such that straight lines connecting the first and second lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 1 0] lattice direction of the sequence.

Abstract: An apparatus includes a substrate having a planar top surface, a sequence of crystalline semiconductor layers located on the planar surface, and first and second sets of electrodes located over the sequence. The sequence of crystalline semiconductor layers has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border first and second channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are located such that straight lines connecting the first and second lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 1 0] lattice direction of the sequence.

Abstract: An apparatus includes a substrate, a sequence of crystalline semiconductor layers on a planar surface of the substrate, and first and second sets of electrodes over the sequence. The sequence has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such that straight lines connecting the lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 1 0] lattice direction of the sequence.

Abstract: An apparatus includes a substrate, a sequence of crystalline semiconductor layers on a planar surface of the substrate, and first and second sets of electrodes over the sequence. The sequence has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such that straight lines connecting the lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 10] lattice direction of the sequence.

Abstract: Apparatus comprising surface site comprising substantially inorganic surface having chemical composition selected from group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within polypeptide bonding region and having selective bonding affinity for polypeptide; plurality of interlayers between which surface site is interposed; distal site end on surface site and distanced from interlayers, the surface being provided on distal site end; surface site and interlayers being interposed between first and second supports; first and second conductors provided on first and second supports and having respective first and second distal conductor ends positioned within polypeptide bonding region; conductors being capable of applying external voltage potential across polypeptide bonding region.

Abstract: Method that includes providing plurality of test sites each having first and second layers respectively including inorganic first and second surface sites forming parts of interior of a well, the surface sites having positions and thicknesses being configured for locating thereon portions of unidentified amino acid-containing molecules; exposing each of a first plurality of the test sites to a fluid containing a different one of plurality of pre-identified amino acid-containing molecules and determining bonding signatures onto each of first plurality of test sites; exposing each of second plurality of test sites to another fluid containing unidentified amino acid-containing molecule and determining bonding signatures onto second plurality of test sites; and comparing bonding signatures to determine or exclude identity of unidentified amino acid-containing molecule.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Abstract: Apparatus comprising surface site comprising substantially inorganic surface having chemical composition selected from group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within polypeptide bonding region and having selective bonding affinity for polypeptide; plurality of interlayers between which surface site is interposed; distal site end on surface site and distanced from interlayers, the surface being provided on distal site end; surface site and interlayers being interposed between first and second supports; first and second conductors provided on first and second supports and having respective first and second distal conductor ends positioned within polypeptide bonding region; conductors being capable of applying external voltage potential across polypeptide bonding region.

Abstract: Method that includes providing plurality of test sites each having first and second layers respectively including inorganic first and second surface sites forming parts of interior of a well, the surface sites having positions and thicknesses being configured for locating thereon portion of unidentified amino acid-containing molecules; exposing each of a first plurality of the test sites to a fluid containing a different one of plurality of pre-identified amino acid-containing molecules and determining bonding signatures onto each of first plurality of test sites; exposing each of second plurality of test sites to another fluid containing unidentified amino acid-containing molecule and determining bonding signatures onto second plurality of test sites; and comparing bonding signatures to determine or exclude identity of unidentified amino acid-containing molecule.

Abstract: Apparatus comprising a surface site comprising a substantially inorganic surface having a chemical composition selected from the group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site is interposed; a distal site end on the surface site and distanced from the interlayers, the surface being provided on the distal site end; the surface site and the interlayers being interposed between first and second supports; first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; the conductors being capable of applying an external voltage potential across the polypeptide bonding region.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Abstract: Apparatus comprising a surface site comprising a substantially inorganic surface having a chemical composition selected from the group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site is interposed; a distal site end on the surface site and distanced from the interlayers, the surface being provided on the distal site end; the surface site and the interlayers being interposed between first and second supports; first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; the conductors being capable of applying an external voltage potential across the polypeptide bonding region.

Abstract: An apparatus includes a field-effect transistor (FET). The FET includes a region of first semiconductor and a layer of second semiconductor that is located on the region of the first semiconductor. The layer and region form a semiconductor heterostructure. The FET also includes source and drain electrodes that are located on one of the region and the layer and a gate electrode located to control a conductivity of a channel portion of the semiconductor heterostructure. The channel portion is located between the source and drain electrodes. The gate electrode is located vertically over the channel portion and portions of the source and drain electrodes.

Abstract: An apparatus includes a field-effect transistor (FET). The FET includes a region of first semiconductor and a layer of second semiconductor that is located on the region of the first semiconductor. The layer and region form a semiconductor heterostructure. The FET also includes source and drain electrodes that are located on one of the region and the layer and a gate electrode located to control a conductivity of a channel portion of the semiconductor heterostructure. The channel portion is located between the source and drain electrodes. The gate electrode is located vertically over the channel portion and portions of the source and drain electrodes.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.