Abstract: A computer implemented method for determining a representative input data set for post-training quantization of artificial neural networks comprises: acquiring an input data set; processing the input data set to extract one or more parameters associated with the input data set; setting clipping limits comprising a lower clipping limit and an upper clipping limit; adapting the upper and lower clipping limits by computing (656) a quantization error based on a numerical difference between the input data set and a quantized and a dequantized input data set, wherein the error is computed based on an error metric which is based on user input; and determining a representative input data set as a subset of the input data set whose elements fit within the clipping limits; wherein the representative input data set is to be used for quantization calibration of the post-training quantization.

Abstract: A computer implemented method for adapting an artificial neural network graph, the method comprising: acquiring an input artificial neural network graph; carrying out a global manipulation step comprising a first set of manipulations configured to adapt the input artificial neural network graph based on at least one user-defined criterion to generate a first intermediate artificial neural network graph; dissecting the first intermediate artificial neural network graph to generate a plurality of second intermediate artificial neural network graphs based on a specification file; and carrying out a respective local manipulation step for each of the plurality of second intermediate artificial neural network graphs, wherein each local manipulation step comprises a corresponding second set of manipulations configured to adapt a corresponding second intermediate artificial neural network graph based on at least one corresponding user-defined criterion and generate a corresponding manipulated second intermediate arti

Abstract: The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.