Abstract: A contact element for contacting at least one long molded part, in particular a cable, in the unassembled state includes a plurality of first windings and a plurality of second windings which are geometrically different from the first windings, and a through-opening for the passage of a long molded part.

Abstract: Computer-implemented methods and structures deploy a heating ventilation and air conditioning (HVAC) energy optimization program. A standard operating control platform (OCP) is deployed in an energy optimization control engine (EOCE) computing system communicatively coupled to a plurality of HVAC components via a building automation system (BAS). An energy optimization portal (EOP), which receives from the EOCE computing system a first data set identifying the plurality of HVAC components, a second data set including operational control parameters for each of the plurality of HVAC components, and a third data set including measured operations data associated with each of the plurality of HVAC components. The EOP generates an energy optimized operating control platform based on the first, second, and third data sets, which is automatically communicated from the EOP to the EOCE computing system.

Abstract: A thin-film solar module with a substrate and a layer structure applied thereon that comprises a rear electrode layer, a front electrode layer, and an absorber layer arranged between the back electrode layer and the front electrode layer. Serially connected solar cells are formed in the layer structure by patterning zones, wherein each patterning zone comprises a first patterning line for subdividing at least the rear electrode layer, a second patterning line for subdividing at least the absorber layer, and at least one third patterning line for subdividing at least the front electrode layer. At least one patterning zone has one or more optically transparent zones in a zone region reduced by the first patterning line, which are in each case rear-electrode-layer-free, wherein the one or more optically transparent zones are implemented such that the rear electrode layer is continuous in the zone region.

Abstract: An induction welding assembly and inductive welding method is disclosed. A tooling block includes a workpiece zone, a conductive heat generation and transfer member, and a heat shield, with the conductive heat generation and transfer member being disposed between the workpiece zone and the heat shield. A first workpiece and a second workpiece may be disposed within the workpiece zone such that the first workpiece is disposed between the conductive heat generation and transfer member and the second workpiece. The heat shield, conductive heat generation and transfer member, first workpiece, and second workpiece may be pressed together. An induction coil may be positioned in spaced relation to the heat shield and may be operated to heat the conductive heat generation and transfer member. Heat is conductively transferred by the conductive heat transfer member to the first workpiece to weld the first workpiece and the second workpiece together.

Abstract: A thin-film solar module with a substrate and a layer structure applied thereon that comprises a rear electrode layer, a front electrode layer, and an absorber layer arranged between the back electrode layer and the front electrode layer. Serially connected solar cells are formed in the layer structure by patterning zones, wherein each patterning zone comprises a first patterning line for subdividing at least the rear electrode layer, a second patterning line for subdividing at least the absorber layer, and at least one third patterning line for subdividing at least the front electrode layer. At least one patterning zone has one or more optically transparent zones in a zone region reduced by the first patterning line, which are in each case rear-electrode-layer-free, wherein the one or more optically transparent zones are implemented such that the rear electrode layer is continuous in the zone region.

Abstract: An assembly is provided for induction welding. This assembly utilizes a plurality of heat shields (e.g., mica heat shields) that are aligned/disposed in end-to-end relation, with each such heat shield having a recess. An induction welding coil may be disposed within a heat shield recess during induction welding operations and is movable along a welding path while proceeding along the recesses of the various heat shields. This welding path may be axially extending or may be curved. The induction welding assembly may be used to induction weld a stiffener to a curved skin or shell, for instance where a base of the recess for each heat shield is curved such that the induction welding coil may be moved along a curved welding path and while maintaining a constant spacing between the induction welding coil and the recess base of the various heat shields.

Abstract: An induction welding system includes a first gantry, a second gantry, and a support structure. The first gantry includes a first frame and a first plurality of trunks. The first plurality of trunks defines a first curved inner support surface of the first gantry. The first curved inner support surface has a first curvature geometry. The second gantry includes a second frame and a second plurality of trunks. The second plurality of trunks defines a second curved inner support surface of the second gantry. The second curved inner support surface has a second curvature geometry which is different than the first curvature geometry. The support structure includes at least one tooling member defining a curved outer support surface of the support structure. The support structure is longitudinally moveable relative to the first gantry and the second gantry.

Abstract: An assembly is provided for induction welding. This assembly utilizes a heat shield (e.g., a mica heat shield) with a recess. An induction welding coil may be disposed within this heat shield recess during induction welding operations. The wall thickness of the heat shield within the recess may be reduced to enhance heat transfer to a workpiece during induction welding operations. Members may engage the heat shield on opposite sides of the recess (and that have an increased wall thickness) to support both the heat shield and the workpiece during induction welding operations, during which a biasing force may be exerted on both the heat shield and workpiece.

Abstract: A system and method for welding thermoplastic components is provided. The system includes a component positioning system and a welding subsystem. The component positioning system includes a trailing force applicator having first and second lateral side trailing force applicators disposed on opposite lateral sides of a weld line. The welding subsystem is configured to weld the thermoplastic components together at a weld zone. The first and second lateral side trailing force applicators are laterally spaced apart from the weld zone, and at least a portion of the first and second lateral side trailing force applicators are disposed aft of the weld zone. During welding the first and second lateral side trailing force applicators and a welding subsystem probe are moved relative to the thermoplastic components, or vice versa.

Abstract: An induction welding system includes a first gantry, a second gantry, and a support structure. The first gantry includes a first frame and a first plurality of trunks. The first plurality of trunks defines a first curved inner support surface of the first gantry. The first curved inner support surface has a first curvature geometry. The second gantry includes a second frame and a second plurality of trunks. The second plurality of trunks defines a second curved inner support surface of the second gantry. The second curved inner support surface has a second curvature geometry which is different than the first curvature geometry. The support structure includes at least one tooling member defining a curved outer support surface of the support structure. The support structure is longitudinally moveable relative to the first gantry and the second gantry.

Abstract: A method for producing a layer structure for the production of thin-film solar cells including: providing a carrier substrate, depositing a rear electrode layer on the carrier substrate, producing a rear-electrode-layer-free region, creating a measurement layer over the rear electrode layer such that the measurement layer is situated at least over the rear-electrode-layer-free region, wherein the measurement layer is a photoactive absorber layer or a precursor layer of the photoactive absorber layer, and determining a quantity or a relative share of a component of the measurement layer in a region of the measurement layer that is situated over the rear-electrode-layer-free region of the rear electrode layer.

Abstract: A thin-film solar module with a substrate and a layer structure applied thereon that comprises a rear electrode layer, a front electrode layer, and an absorber layer arranged between the back electrode layer and the front electrode layer. Serially connected solar cells are formed in the layer structure by patterning zones, wherein each patterning zone comprises a first patterning line for subdividing at least the rear electrode layer, a second patterning line for subdividing at least the absorber layer, and at least one third patterning line for subdividing at least the front electrode layer. At least one patterning zone has one or more optically transparent zones in a zone region reduced by the first patterning line, which are in each case rear-electrode-layer-free, wherein the one or more optically transparent zones are implemented such that the rear electrode layer is continuous in the zone region.

Abstract: A method for producing a layer structure for the production of thin-film solar cells including: providing a carrier substrate, depositing a rear electrode layer on the carrier substrate, producing a rear-electrode-layer-free region, creating a measurement layer over the rear electrode layer such that the measurement layer is situated at least over the rear-electrode-layer-free region, wherein the measurement layer is a photoactive absorber layer or a precursor layer of the photoactive absorber layer, and determining a quantity or a relative share of a component of the measurement layer in a region of the measurement layer that is situated over the rear-electrode-layer-free region of the rear electrode layer.

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based on at least two elements, at least one first element MA chosen among copper (Cu), silver (Ag) and gold (Au), and at least one second element MB chosen among zinc (Zn), titanium (Ti), tin (Sn), silicon (Si), germanium (Ge), zirconium (Zr), hafnium (Hf), carbon (C) and lead (Pb).

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based: on at least one among copper (Cu) and silver (Ag); and on zinc (Zn).

Abstract: A back contact substrate for a photovoltaic cell, including a carrier substrate and an electrode, the electrode including a conductive coating including a metallic thin film based on a metal or metal alloy; a barrier to selenization thin film for protecting the conductive coating and based on at least one among MoxOyNz, WxOyNz, TaxOyNz, NbxOyNz, RexOyNz.

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.

Abstract: A method for producing a layered stack for manufacturing a thin film solar cell having a compound semiconductor of the type Cu2ZnSn(S,Se)4 is described.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.