Abstract: A broadcasting apparatus is provided for killing insects. The broadcasting apparatus includes an emitter operable to emit a wave therefrom. The wave is at least one of a sound or one of a light. The apparatus includes a detection means of determining the species of insect, a processor and a memory to provide the most effective wave to kill the insect. A power source is operatively connected to the emitter and provides power to the emitter. The wave emitted from the emitter is capable of breaking a wing of an insect.

Abstract: An improved semiconductor laser (distributed feedback or Bragg reflector laser) is disclosed, having reducing wavelength chirping. In a laser having a substrate, an optical waveguide layer disposed on the substrate with a grating region, and a cladding region disposed on the optical waveguide layer, an isolation region is positioned in at least one of the substrate, optical waveguide layer, and cladding layer. The isolation region is comprised of a material adapted to increase the resistivity of the one or more layers in which it is placed to reduce electrical cross-talk and wavelength chirping. Preferably, the isolation region is positioned in at least the cladding layer, which the inventors have found is the greatest contributor of cross-talk and wavelength chirping.

Abstract: A method for reducing optical loss in opto-electronic devices includes passivating P-type dopant impurities formed within various cladding and contact layer films. The passivating species is atomic hydrogen produced by a hydrogen containing plasma. The atomic hydrogen complexes with P-type dopant impurities to form electrically neutral pairs which are void of free carriers. Absorption, and loss, of the optical wave is therefore suppressed as it propagates through the P-doped layers because of the reduced free carrier concentration in the P-doped layers.

Abstract: The thermo-optic behavior of an optical path over a range of temperatures &Dgr;T is controlled by determining a figure-of-merit (FOM) for the optical path and including in the path a body of crystalline material that enables the conditions specified by the FOM to be satisfied. The crystalline material is highly transparent at a wavelength &lgr; of radiation propagating in the path, and it has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT are mutually adapted to satisfy the FOM over the range &Dgr;T. In one embodiment, the CTE and dn/dT of an etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range &Dgr;T. In a preferred embodiment of the optical etalon the crystalline material comprises LiCaAlF6.

Abstract: The invention is a laser with improved turn-on time for digital applications. The low bias capacitance effect of the laser is reduced by use of a buffer region formed between the substrate and the active region, the buffer region having a lower dopant concentration than the substrate.

Abstract: It has been discovered that plastic deformation of a wafer of light-emitting semiconductor material during processing creates areas of poor radiative efficiency known as large dark spot (LDS) defects. An improved technique for lapping is described which alleviates stress and substantially reduces the initiation and propagation of such defects. Conventionally, wafers are affixed to a mounting plate by coating the plate with wax or some other appropriate adhesive and then applying pressure. The improvement comprises interposing a spacer between the mounting plate and the wafer. The spacer is capable of accommodating surface irregularities and particulates while maintaining substrate planarity.