Abstract: The present disclosure relates generally to eukaryotic initiation factor 2B modulators of formula A, or a pharmaceutically acceptable salt, stereoisomer, or mixture of stereoisomers thereof and methods of making and using thereof.

Abstract: The present disclosure relates generally to eukaryotic initiation factor 2B modulators, or a pharmaceutically acceptable salt, stereoisomer, mixture of stereoisomers, or prodrug thereof, and methods of making and using thereof.

Abstract: An anti-polish ring for an internal combustion engine is provided. The anti-polish ring includes an axially extending ring portion that is configured to scrape a top portion of a piston in a cylinder liner. The anti-polish ring is configured to accommodate passage of an intake or exhaust valve thereby. The anti-polish ring may include an alignment feature so that the anti-polish ring is inserted in a predetermined orientation in the cylinder. The anti-polish ring may include a heat shield and/or a seating member.

Abstract: A self-testing transceiver having an on-chip power detection capability is provided. The self-testing transceiver can include a semiconductor substrate and a transmitter having a high-power amplifier disposed on the substrate. The self-testing transceiver also can include a receiver disposed on the substrate for selectively coupling to an antenna. The self-testing transceiver can further include at least one power detector disposed on the semiconductor substrate for determining a power such as an RMS and/or peak-power of a signal at an internal node of the self-testing transceiver. Additionally, the self-testing transceiver can include a loopback circuit disposed on the substrate.

Abstract: An embedded s-parameter measurement system for measuring or determining an s-parameter is provided. The system includes an s-parameter test circuit for connecting to a port of a high-frequency multi-port device-under-test (DUT). The s-parameter test circuit includes a directional coupler for sampling a forward signal conveyed to the DUT and for sampling a reverse signal reflected by the DUT. The s-parameter test circuit also includes a peak detector electrically connected to the directional coupler for detecting a magnitude of a signal conveyed to the peak detector by the directional coupler. The s-parameter test circuit further includes a phase detector electrically connected to the directional coupler for determining a phase of a signal conveyed to the phase detector by the directional coupler, and at least one other s-parameter test circuit for connecting to another port of the high-frequency multi-port DUT.

Abstract: A distributed RF/microwave power detector for detecting the power of a signal is provided. The distributed RF/microwave power detector includes a power detector on or at least partially embedded in a single substrate. The distributed RF/microwave power detector includes a detection unit that has a distributed amplifier for amplifying the signal and outputting an amplified signal, and a detector for detecting the power of the amplified signal. The distributed RF/microwave power detector further includes at least one additional detection unit cascaded with the first. The additional detection unit includes an additional distributed amplifier for amplifying the amplified signal and outputting a further amplified signal, as well as an additional detector for detecting a power of the further amplified signal. The distributed RF/microwave power detector also includes a multiplexer for multiplexing outputs of the detector and at least one additional detector, each having a dynamic range different from the other.

Abstract: A broadband active balun configuration is provided. According to embodiments, the subject active balun can include a cascade and cascade transistor pair using a shared input transistor. In a further implementation, a low-pass bias-feedback mechanism for maintaining stable bias conditions can be provided.

Abstract: A broadband active balun configuration is provided. According to embodiments, the subject active balun can include a cascade and cascade transistor pair using a shared input transistor. In a further implementation, a low-pass bias-feedback mechanism for maintaining stable bias conditions can be provided.

Abstract: A self-testing transceiver having an on-chip power detection capability is provided. The self-testing transceiver can include a semiconductor substrate and a transmitter having a high-power amplifier disposed on the substrate. The self-testing transceiver also can include a receiver disposed on the substrate for selectively coupling to an antenna. The self-testing transceiver can further include at least one power detector disposed on the semiconductor substrate for determining a power such as an RMS and/or peak-power of a signal at an internal node of the self-testing transceiver. Additionally, the self-testing transceiver can include a loopback circuit disposed on the substrate.

Abstract: A distributed RF/microwave power detector for detecting the power of a signal is provided. The distributed RF/microwave power detector includes a power detector on or at least partially embedded in a single substrate. The distributed RF/microwave power detector includes a detection unit that has a distributed amplifier for amplifying the signal and outputting an amplified signal, and a detector for detecting the power of the amplified signal. The distributed RF/microwave power detector further includes at least one additional detection unit cascaded with the first. The additional detection unit includes an additional distributed amplifier for amplifying the amplified signal and outputting a further amplified signal, as well as an additional detector for detecting a power of the further amplified signal. The distributed RF/microwave power detector also includes a multiplexer for multiplexing outputs of the detector and at least one additional detector, each having a dynamic range different from the other.

Abstract: An embedded s-parameter measurement system for measuring or determining an s-parameter is provided. The system includes an s-parameter test circuit for connecting to a port of a high-frequency multi-port device-under-test (DUT). The s-parameter test circuit includes a directional coupler for sampling a forward signal conveyed to the DUT and for sampling a reverse signal reflected by the DUT. The s-parameter test circuit also includes a peak detector electrically connected to the directional coupler for detecting a magnitude of a signal conveyed to the peak detector by the directional coupler. The s-parameter test circuit further includes a phase detector electrically connected to the directional coupler for determining a phase of a signal conveyed to the phase detector by the directional coupler, and at least one other s-parameter test circuit for connecting to another port of the high-frequency multi-port DUT.

Abstract: A self-testing transceiver having an on-chip power detection capability is provided. The self-testing transceiver can include a semiconductor substrate and a transmitter having a high-power amplifier disposed on the substrate. The self-testing transceiver also can include a receiver disposed on the substrate for selectively coupling to an antenna. The self-testing transceiver can further include at least one power detector disposed on the semiconductor substrate for determining a power such as an RMS and/or peak-power of a signal at an internal node of the self-testing transceiver. Additionally, the self-testing transceiver can include a loopback circuit disposed on the substrate.

Abstract: A system and method for the analysis of electrical characterizations of semiconductor and electronic devices that utilizes a computing device to initiate a testing procedure of an electronic device by the delivery of a test voltage or current signal to the electronic device by way of the hardware interface. The electronic device's response to the voltage or current signals is measured by the hardware interface and the responsive signal is analyzed and the results displayed on a computing device.

Abstract: A semiconductor test system includes at least one semiconductor wafer having working dies and at least one test die formed therein. Each of the working dies includes at least one bipolar transistor. A tester selectively supplies a changing direct current (DC) input signal to a selected test die and monitors a DC output signal therefrom. Each test die includes a test oscillator having at least one sample bipolar transistor substantially identical to the bipolar transistors of the working dies. The test oscillator switches between a non-oscillating state and an oscillating state as the DC input signal changes, and generates the DC output signal to the tester indicative of switching between the non-oscillating state and the oscillating state. A threshold level of a bias current that causes the test oscillator to switch between the non-oscillating state and the oscillating state is correlated to the maximum oscillation frequency and the transition frequency of the sample bipolar transistor.

Abstract: A container lid adapted for removable reception over a rim portion of a associated container having a center panel portion and a peripheral skirt portion depending therefrom and having a small pin latch opening extending through the center panel portion and also including an access flap formed by portions of the center panel and the peripheral skirt adapted to provide access to the interior of the container.

Abstract: The x-ray imaging system comprises an x-ray source for producing an x-ray beam having an energy of at least 30 kVp and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. The detector is responsive to x-rays of at least 30 keV to directly produce free electrons which interact with the charge storage devices.

Abstract: The invention comprises a scintillator for converting impinging x-rays into visible light; a sensor array having two opposed surfaces with a plurality of detectors at one of the surfaces and having the other of the surfaces facing the scintillator; and a plurality of processing circuits facing the one surface and connected to the detectors by bump bonds. Another feature of the invention is a gain stage in close proximity to sensors, which may be MOS capacitors. A single gain stage may be connected to one capacitor or may be connected to several at one time.

Abstract: Each key in a set of keys has a headless shank. A slotted opening through the shank is slightly larger than the shank so that any key can be installed over the shank of the active key to act as a wrench to turn the active key. In addition, any shank can carry two blades thereon, one on each end of the shank.

Abstract: A wide deflector for a vehicle body having a roof opening selectively closed by a movable closure panel includes a molded plastic deflector body having a mounting portion attached to the roof outer panel forward of the roof opening and cantilevered rearwardly above the roof opening. The deflector body also includes a deflecting vane which overlies the roof opening and is connected to the mounting portion by a hinge axis extending transversely of the vehicle body above the roof opening to permit movement of the deflecting vane between the stowed position in parallel overlying relationship with the closure panel and an angularly raised position which disposes the deflecting vane in a wind-deflecting attitude above the roof opening. A spring acts between the mounting portion and the deflecting vane and urges the deflecting vane to the angularly raised wind-deflecting attitude.

Abstract: An infinite position door hold open includes a pair of pivotally interconnected hinge members which are respectively mounted on the door and body. The door mounted hinge member pivotally supports an arcuate link having oppositely facing braking and frictional surfaces, both generated about the pivotal axis of the hinge members. The braking surface is frictionally engageable with a brake pad adjustably mounted on the body mounted hinge member. The engagement of the braking surface with the brake pad is controlled by pivotal movement of a wedging cam relative to the door mounted hinge member between non-wedging limit positions through an intermediate wedging position. The cam has a friction member in constant engagement with the frictional surface of the brake member.