Abstract: A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

Abstract: A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

Abstract: A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

Abstract: A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

Abstract: A motor vehicle system for automatically reporting exception events, comprising: one or more digital cameras, at least one digital camera having a primary function; an image memory system for storing digital images; means for detecting exception events; and a wireless communications system for communicating with a central reporting service. A program memory stores executable instruction for causing a processor to perform the steps of: using at least one of the digital cameras to periodically capture digital images at a specified capture frequency; storing the periodically captured digital images in the image memory for a specified period of time; and receiving input from the means for detecting an exception event. In response to the detection of an exception event a communication link is opened to the central reporting service using the wireless communications system, and one or more of the captured digital images are transmitted to the central reporting service.

Abstract: A digital camera system, comprising: a digital image sensor; an optical system for forming an image of a scene onto the digital image sensor; a global positioning system sensor; a processor-accessible memory system; and a processor. The processor performs the steps of: analyzing a signal from the global positioning system sensor to determine whether the digital camera system is indoors or outdoors; capturing an input digital image of the scene using the digital image sensor; processing the input digital image responsive to whether the digital camera system is indoors or outdoors; and storing the processed digital image in the processor-accessible memory system.

Abstract: A digital camera system, comprising: a digital image sensor; an optical system for forming an image of a scene onto the digital image sensor; a global positioning system sensor; a processor-accessible memory system; and a processor. The processor performs the steps of analyzing a signal from the global positioning system sensor to determine whether the digital camera system is indoors or outdoors; capturing an input digital image of the scene using the digital image sensor; processing the input digital image responsive to whether the digital camera system is indoors or outdoors; and storing the processed digital image in the processor-accessible memory system.

Abstract: A method for forming an image, implemented at least in part by a data processing apparatus, by obtaining a first image of a scene from a first subset of pixels in an image sensor array at a first f/# setting, adjusting the imaging optics that obtain light from the scene at a second f/# setting, obtaining a second image of the scene from a second subset of pixels in the image sensor array, and forming a composite image by combining image data from at least the first and second images.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

Abstract: An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.

Abstract: A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: A motor vehicle system for automatically reporting exception events, comprising: one or more digital cameras, at least one digital camera having a primary function; an image memory system for storing digital images; means for detecting exception events; and a wireless communications system for communicating with a central reporting service. A program memory stores executable instruction for causing a processor to perform the steps of: using at least one of the digital cameras to periodically capture digital images at a specified capture frequency; storing the periodically captured digital images in the image memory for a specified period of time; and receiving input from the means for detecting an exception event. In response to the detection of an exception event a communication link is opened to the central reporting service using the wireless communications system, and one or more of the captured digital images are transmitted to the central reporting service.

Abstract: The invention utilizes an autofocus system (806) that is capable of very fast changes in focus over a relatively small portion of the focus range of the focusing system. When operating continuously in a repeating series of images or frames such as are found in preview mode or in video capture, autofocus images are captured before and after each video frame wherein the autofocus images have different focus settings than the images in the series. The autofocus images are then evaluated for focus quality to determine whether focus adjustments are needed.

Abstract: A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.

Abstract: A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.

Abstract: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

Abstract: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

Abstract: A vertically-integrated active pixel sensor includes a sensor layer connected to a circuit layer. At least one pixel region on the sensor layer includes a photodetector and a charge-to-voltage converter. At least one pixel region on the circuit layer consists of a source follower input transistor. A connector connects the charge-to-voltage converter to a gate of the source follower input transistor. The connector is used to transfer a signal from the charge-to-voltage converter to the source follower input transistor.