Patents by Inventor Robert M. Weikle
Robert M. Weikle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210223288Abstract: A probe chip device and a method for fabricating a probe chip device with an integrated diode sensor are disclosed. In one example, a probe chip device includes a beam head element that includes at least one probe tip that is configured to electrically probe a device under test. The probe chip device further includes a diode sensor that is heterogeneously integrated on the beam head element and is proximally positioned to the at least one probe tip.Type: ApplicationFiled: May 10, 2019Publication date: July 22, 2021Applicant: University of Virginia Patent FoundationInventors: Robert M. WEIKLE, Linli XIE, Michael E. CYBEREY, Souheil NADRI, Matthew F. BAUWENS, Arthur Weston LICHTENBERGER, Nicolas Scott BARKER
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Patent number: 10425040Abstract: An integrated frequency quadruplet consists of a pair of balanced frequency doublers that are driven in phase quadrature using a hybrid coupler. This approach results, effectively, in a “unilateral” multiplier that presents a match to the input-driving source, irrespective of the impedance of the doubler stages. The present invention applies this architecture to implement an integrated frequency quadruplet with output frequency of 160 GHz using quasi vertical GaAs varactors fabricated on thin silicon support membranes. The quadruplet has a balanced circuit architecture that addresses degradation issues often arising from impedance mis-matches between multiplier stages. A unique quasi-vertical diode process is used to implement the quadruplet, resulting in an integrated drop-in chip module that incorporates 18 varactors, matching networks and beamleads for mounting. The chip is tailored to fit a multiplier waveguide housing resulting in high reproducibility and consistency in manufacture and performance.Type: GrantFiled: August 28, 2015Date of Patent: September 24, 2019Assignee: UNIVERSITY OF VIRGINIA PATENT FOUNDATIONInventors: Naser Alijabbari, Robert M. Weikle, II, Matthew Bauwens
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Patent number: 10283363Abstract: A quasi-vertical Schottky diode architecture includes a topside anode contact that connects to external circuitry through an airbridge finger, a thin mesa of semiconductor material with epilayers including a bottomside highly-doped layer, a bottomside ohmic contact directly below the anode, and a host substrate onto which the diode material is bonded by a thin adhesive layer. A method of fabricating the diode architecture includes preparation of the semiconductor wafer for processing (including initial etching to expose the highly-doped epilayer, deposition of metals and annealing to form the ohmic contact, application of the adhesive layer to the host substrate, thermal compression bonding of diode wafer and host wafer, with ohmic contact side facing host wafer to form a composite wafer, etching and formation of diode mesas to isolate devices on the host substrate, lithography and formation of topside anode contact and external circuitry on host wafer).Type: GrantFiled: August 28, 2015Date of Patent: May 7, 2019Assignee: UNIVERSITY OF VIRGINIA PATENT FOUNDATIONInventors: Naser Alijabbari, Robert M. Weikle, II, Matthew Bauwens
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Publication number: 20170288607Abstract: An integrated frequency quadruplet consists of a pair of balanced frequency doublers that are driven in phase quadrature using a hybrid coupler. This approach results, effectively, in a “unilateral” multiplier that presents a match to the input-driving source, irrespective of the impedance of the doubler stages. The present invention applies this architecture to implement an integrated frequency quadruplet with output frequency of 160 GHz using quasi-vertical GaAs varactors fabricated on thin silicon support membranes. The quadruplet has a balanced circuit architecture that addresses degradation issues often arising from impedance mis-matches between multiplier stages. A unique quasi-vertical diode process is used to implement the quadruplet, resulting in an integrated drop-in chip module that incorporates 18 varactors, matching networks and beamleads for mounting. The chip is tailored to fit a multiplier waveguide housing resulting in high reproducibility and consistency in manufacture and performance.Type: ApplicationFiled: August 28, 2015Publication date: October 5, 2017Applicant: University of VirginiaInventors: Naser Alijabbari, Robert M. Weikle, II, Matthew Bauwens
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Publication number: 20170250083Abstract: A quasi-vertical Schottky diode architecture includes a topside anode contact that connects to external circuitry through an airbridge finger, a thin mesa of semiconductor material with epilayers including a bottomside highly-doped layer, a bottomside ohmic contact directly below the anode, and a host substrate onto which the diode material is bonded by a thin adhesive layer. A method of fabricating the diode architecture includes preparation of the semiconductor wafer for processing (including initial etching to expose the highly-doped epilayer, deposition of metals and annealing to form the ohmic contact, application of the adhesive layer to the host substrate, thermal compression bonding of diode wafer and host wafer, with ohmic contact side facing host wafer to form a composite wafer, etching and formation of diode mesas to isolate devices on the host substrate, lithography and formation of topside anode contact and external circuitry on host wafer).Type: ApplicationFiled: August 28, 2015Publication date: August 31, 2017Applicant: UNIVERSITY OF VIRGINIAInventors: Naser Alijabbari, Robert M. Weikle, II, Matthew Bauwens
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Patent number: 9366697Abstract: A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.Type: GrantFiled: May 20, 2011Date of Patent: June 14, 2016Assignee: University of Virginia Patent FoundationInventors: Robert M. Weikle, II, Arthur Weston Lichtenberger, Nicolas Scott Barker, Theodore James Reck, Haiyong Xu, Lihan Chen
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Publication number: 20130248713Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.Type: ApplicationFiled: August 1, 2012Publication date: September 26, 2013Applicant: Direct Source International, LLCInventors: Boris Gelmont, Tatiana Globus, Robert M. Weikle, Arthur Weston Lichtenberger, Nathan Swami, Ramakrishnan Parthasarathy, Alexei Bykhovski
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Patent number: 8525115Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.Type: GrantFiled: August 1, 2012Date of Patent: September 3, 2013Assignee: University of Virginia Patent FoundationInventors: Boris Gelmont, Tatiana Globus, Nathan Swami, Robert M Weikle, Arthur Weston Lichtenberger, Ramakrishnan Parthasarathy, Alexei Bykhovski
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Publication number: 20130106456Abstract: A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.Type: ApplicationFiled: May 20, 2011Publication date: May 2, 2013Applicant: University of Virginia Patent FoundationInventors: Robert M. Weikle, II, Arthur Weston Lichtenberger, Nicolas Scott Barker, Theodore James Reck, Haiyong Xu, Lihan Chen
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Patent number: 8309930Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.Type: GrantFiled: March 5, 2008Date of Patent: November 13, 2012Assignee: University of Virginia Patent FoundationInventors: Boris Gelmont, Tatiana Globus, Robert M Weikle, Arthur Weston Linchtenberger, Nathan Swami, Ramakrishnan Parthasarthy, Alexei Bykhovski
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Patent number: 6404402Abstract: A horn antenna including first and second substrates having at least one first and at least one second horn shaped cavity formed in the first and second substrates, respectively. The horn shaped cavities taper from a narrow end and have a longitudinal axis along a plane parallel to a top surface of the first and second substrates. The second horn shaped cavity is disposed opposite the first horn shaped cavity and is a mirror image of the first horn shaped cavity. Internal surfaces of the first and second horn shaped cavities include a metalization layer. The horn antenna is fabricated by forming at least one mask having a longitudinally extending mask opening on the first and second substrates and preferentially etching the first and second substrate through the mask opening to form the first and second horn shaped cavities.Type: GrantFiled: April 6, 2000Date of Patent: June 11, 2002Assignee: University of Virginia Patent FoundationInventors: Philip J. Koh, Thomas W. Crowe, Jeffrey L. Hesler, Perry Wood, William L. Bishop, Jr., Robert M. Weikle
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Publication number: 20020057226Abstract: A millimeter or submillimeter wavelength device including a substrate having a horn shaped cavity, and first and second extension layers formed on a top surface of the substrate adjacent to the horn shaped cavity. The first and second extension layers define additional opposed sides of the horn shaped cavity, channels, and walls of the waveguide. Internal surfaces of the horn shaped cavity, the channels, and the waveguide walls include a conductive layer. Two such structures, which are mirror images of each other, are joined to form a horn antenna with integrated channels and a waveguide. The device is fabricated by forming a resist layer on a substrate which includes a horn shaped cavity. The resist layer is etched to form a half horn antenna, channels and walls of a waveguide. Internal surfaces of the half horn antenna, the channels, and the walls of the waveguide are then metalized. Two such metalized structures are then joined to form a full horn antenna integrated with channels and a waveguide.Type: ApplicationFiled: November 19, 2001Publication date: May 16, 2002Applicant: University of Virginia Patent FoundationInventors: Philip J. Koh, Thomas W. Crowe, William L. Bishop, Jeffrey L. Hesler, Robert M. Weikle, Chris Mann, David Matheson
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Patent number: 6323818Abstract: A millimeter or submillimeter wavelength device including a substrate (2) having a horn shaped cavity (18), and first and second extension layers formed on a top surface of the substrate adjacent to the horn shaped cavity. The first and second extension layers define additional opposed sides of the horn shaped cavity, channels, and walls of the waveguide. Internal surfaces of the horn shaped cavity, the channels, and the waveguide walls include a conductive layer. Two such structures, which are mirror images of each other, are joined to form a horn antenna with integrated channels and a waveguide. The device is fabricated by forming a resist layer on a substrate which includes a horn shaped cavity. The resist layer is etched to form a half horn antenna, channels and walls of a waveguide. Internal surfaces of the half horn antenna, the channels, and the walls of the waveguide are then metalized. Two such metalized structures are then joined to form a full horn antenna integrated with channels and a waveguide.Type: GrantFiled: April 6, 2000Date of Patent: November 27, 2001Assignee: University of Virginia Patent FoundationInventors: Philip J. Koh, Thomas W. Crowe, William L. Bishop, Jr., Jeffrey L. Hesler, Robert M. Weikle, Chris Mann, David Matheson