Patents by Inventor Robert Nemanich
Robert Nemanich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336589Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: ApplicationFiled: July 1, 2022Publication date: October 20, 2022Applicant: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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Patent number: 11380763Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: GrantFiled: April 28, 2020Date of Patent: July 5, 2022Assignee: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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Patent number: 11152483Abstract: According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.Type: GrantFiled: September 17, 2019Date of Patent: October 19, 2021Assignee: Massachusetts Institute of TechnologyInventors: Michael Geis, Joseph Varghese, Robert Nemanich
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Current generation from radiation with diamond diode-based devices for detection or power generation
Patent number: 11063162Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.Type: GrantFiled: October 14, 2019Date of Patent: July 13, 2021Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITYInventors: Jason M Holmes, Franz A Koeck, Manpuneet Benipal, Ricardo O Alarcon, Stephen Goodnick, Anna Zaniewski, Robert Nemanich -
Publication number: 20210083070Abstract: According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.Type: ApplicationFiled: September 17, 2019Publication date: March 18, 2021Inventors: Michael Geis, Joseph Varghese, Robert Nemanich
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Publication number: 20200343344Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: ApplicationFiled: April 28, 2020Publication date: October 29, 2020Applicant: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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CURRENT GENERATION FROM RADIATION WITH DIAMOND DIODE-BASED DEVICES FOR DETECTION OR POWER GENERATION
Publication number: 20200119207Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.Type: ApplicationFiled: October 14, 2019Publication date: April 16, 2020Inventors: Jason M Holmes, Franz A Koeck, Maitreya Dutta, Manpuneet Benipal, Raghuraj Hathwar, Ricardo O Alarcon, Srabanti Chowdhury, Stephen Goodnick, Anna Zaniewski, Robert Nemanich -
Patent number: 10418475Abstract: A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.Type: GrantFiled: November 28, 2017Date of Patent: September 17, 2019Assignees: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Srabanti Chowdhury, Maitreya Dutta, Robert Nemanich, Franz Koeck
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Publication number: 20180151715Abstract: A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.Type: ApplicationFiled: November 28, 2017Publication date: May 31, 2018Inventors: Srabanti Chowdhury, Maitreya Dutta, Robert Nemanich, Franz Koeck