Abstract: A method and a system for three-phase detection of a three-phase electric device are provided. The system includes a testing circuit and a comparison module. The testing circuit generates two reference voltages by using the three phase voltages of the three-phase electric device. The two reference voltages are the first and second phase voltages with reference to the third phase voltage, respectively. Three-phase detection is performed by comparing the two reference voltages for a determined number of times. After testing is completed, the testing circuit is switched off by the comparison module, to save power.

Abstract: A method and a system for three-phase detection of a three-phase electric device are provided. The system includes a testing circuit and a comparison module. The testing circuit generates two reference voltages by using the three phase voltages of the three-phase electric device. The two reference voltages are the first and second phase voltages with reference to the third phase voltage, respectively. Three-phase detection is performed by comparing the two reference voltages for a determined number of times. After testing is completed, the testing circuit is switched off by the comparison module, to save power.

Abstract: In an air handling unit for discharging a flow of air into the surrounding ambient, having a series of horizontal louvers and a series of vertical louvers mounted in the discharge flow. A first multi-phase stepper motor is arranged to step the horizontal louvers to deflect the air flow in a vertical direction and a second multi-phase stepper motor is arranged to step vertical louvers to deflect the flow in a transverse direction. A controller is programmed to alternately apply power from a single power source to each of the motors during each phase to step each motor in equal increments during each phase.

Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.

Abstract: Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the substrate in an atmosphere having a selected oxygen concentration to form an oxide surface layer. The oxidation is performed at a temperature and for a time duration such that the formation of the oxide layer causes the injection of a controlled number of atoms of the substrate from a region proximate to an interface between the newly formed oxide layer and the substrate into the upper regions of the substrate to reduce strain. A high temperature annealing step is then performed to produce the insulating layer within the precursor layer.

Abstract: A system for verifying the operability of one or more HVAC devices in a communication network includes a network control device that sends a particular type of message to the HVAC devices. Each HVAC device receiving the message will initiate a clearly visible display on the HVAC device if the message is appropriately processed within the receiving HVAC device. Each HVAC device may be visually checked to confirm that it is in fact responding to the message from the network control device.

Abstract: An electronic system for monitoring the condition of the filter in an HVAC unit includes a controller which issues at least one command to a circuit for the motor of the fan producing airflow through the filter. The command to the driver circuit is associated with a desired run speed for the fan. The controller is operative to compute the speed of the fan following issuance of the command to the motor drive circuit. This computed speed is compared to a predetermined fan speed that would normally occur when the filter is dirty. The electronic system is operative to generate a warning in the event that the computed fan speed does not compare favorably with the predetermined fan speed.

Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.

Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.

Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.

Abstract: A defrost control for a heat exchange system initiates a defrost of the evaporator coil when a predetermined count of compressor cycles occurs and other sensed conditions indicate that defrost should be initiated. The sensed conditions include a sensed temperature of a condenser coil in the heat exchange system having dropped below a threshold temperature computed as a function of the number of compressor cycles that have occurred since the last defrost of the evaporator coil.

Abstract: An HVAC system is assigned a network identification for subsequent use within a communication network upon receipt of a formatted signal containing the network identification. The HVAC system stores the network identification in nonvolatile memory. The HVAC system also preferably stores a verification image of the communicated network identification so that any reading back of the network identification can be validated through comparison with the stored verification image.

Abstract: A defrost control for a heat pump system initiates a defrost of the outdoor coil when certain computed condition occur. The conditions include exceeding a limit as to the difference that may be permitted between the maximum indoor coil temperature occurring since the last defrosting of the outdoor coil and the current indoor coil temperature. The limit that may not be exceeded is computed as a function of the maximum indoor coil temperature occurring since the last defrosting of the outdoor coil.

Abstract: HVAC control information is stored in a memory associated with a programmable processor in such a manner as to be recallable in a potentially high electrical noise environment. The HVAC control information is stored along with corresponding verification images in particular memory locations. The verification images for at least some of the HVAC control information have unique mathematical relationships with respect to the stored pieces of HVAC control information.

Abstract: HVAC control information is written in a particular manner to a memory associated with a programmable processor. The processor generates verification images of the information and stores the same along with the information in addressable memory locations. The stored information and its corresponding verification images is read back for verification as to having been correctly stored in addressable memory locations. A rewriting and rereading of the information and the respective verification images can occur up to a predetermined number of times if necessary to verify that the information and respective verification images have been correctly stored.

Abstract: A defrost control for a heat pump system initiates a defrost when certain computed conditions are exceeded. The conditions include a limit as to the difference that may be permitted between the maximum temperature difference of two measured temperatures and the current difference of these measured temperatures. The two measured temperatures are the temperature of the indoor coil of the heat pump and the indoor air temperature of the air being heated by the indoor coil.

Abstract: A device for reading and transmitting control parameter selections to a control system for an HVAC system is disclosed. The device is activated by the control system which receives the encoded control parameter selections. The activation is preferably accomplished by switching a power supply on and off that is associated with the reading and transmitting device.

Abstract: System and process are disclosed for selecting a range or configuration of refrigerants that may thereafter be used by a refrigerant recovery system in the recovery of one or more of the refrigerants. The recovery of refrigerants may occur at anytime after a range has been selected including a time during which the refrigerant recovery system has been switched off and back on again.