Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/Auc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows:

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/{square root over (A)}uc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows:

Abstract: This invention relates to fixed abrasive articles and abrasive constructions containing at least one fluorochemical agent. The fixed abrasive articles and abrasive constructions are used in semiconductor wafer surface modification processes during the fabrication of semiconductor devices. Specifically, fixed abrasive articles comprise an abrasive composite that is coextensive with a backing and at least one fluorochemical agent associated with the composite. The invention further relates to methods of making fixed abrasive articles comprising at least one fluorochemical agent.

Abstract: A method of modifying an exposed surface of a semiconductor wafer that includes the steps of:(a) contacting the surface with a fixed abrasive article having a three-dimensional textured abrasive surface that includes a plurality of abrasive particles and a binder in the form of a pre-determined pattern; and(b) relatively moving the wafer and the fixed abrasive article to modify said surface of the wafer.

Abstract: A carbonaceous preform is infiltrated with a silicon melt alloyed with at least one element which is substantially insoluble in silicon carbide and which forms refractory phases. The resulting silicon carbide composite has substantially no free silicon. Silicides of the alloying elements are a suitable refractory phase. Suitable alloying elements which form refractory silicides include Mo, W, Re, Hf, Zr, Cr, B, and Ti. The carbonaceous preform may include graphite particulates, carbon particulates, porous carbon skeletons, carbon-carbon composites, carbon fibers, and graphite fibers. Particulates may be incorporated into the preform for the purpose of improving mechanical properties. Suitable particulates include refractory metals, carbides, nitrides, borides, silicides, and oxides. Fiber-reinforced composites can be produced by incorporating whiskers, chopped fibers, or continuous fibers of a refractory material into the preform.