Abstract: A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.

Abstract: An integrated micropump or a plurality of integrated micropumps are communicated to a plurality of analysis chambers. A plurality of integrated analysis chambers include integrated analysis devices to test a fluid for an analyte. The micropumps continuously or periodically pump the fluid into the analysis chambers and flush the analysis chambers after analysis of the analyte. In one embodiment, the analysis device comprises an integrated LED and an integrated optical detector. The LED and detector are tuned to an optical absorption line of the analyte. The micropumps are composed of nitrides of B, Al, Ga, In, Tl or combinations thereof and fabricated using photoelectrochemical techniques. The analysis chambers, and micropumps including the analysis devices are simultaneously fabricated during which fabrication of the micropumps and the analysis devices are masked from the photoelectrochemical techniques.

Abstract: An integrated microsensor includes a bowed micromachined membrane coupled to a substrate to define a microcavity therebetween. An integrated strain sensor is coupled to the micromachined membrane to generate a signal responsive to (deformation of the membrane and hence responsive to the pressure of the fluid in the microcavity. A frame is coupled to the peripheral edge of the membrane to assist in enlarging the microcavity. The membrane is composed of a nitride of B, Al, Ga, In, Tl or combinations thereof, or more particularly of p-type GaN where the frame is comprised of n-type GaN. The membrane and frame are fabricated using a photoelectrochemical etching technique. The fabrication of the integrated strain sensor creates stresses across the membrane. The strain sensor comprises an integrated circuit strain-FET. The strain-FET comprises an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of the membrane is coupled as strain to the AlGaN/GaN piezoelectric interface.

Abstract: A suspended p-GaN membrane is formed using photochemical etching which membrane can then be used in a variety of MEMS devices. In the illustrated embodiment a pump is comprised of the p-GaN membrane suspended between two opposing, parallel n-GaN support pillars, which are anchored to a rigid substrate below the pillars. The p-GaN membrane bows upward between the pillars in order to relieve stress built up during the epitaxial growth of membrane. This bowing substantially increases the volume of the enclosed micro-channel defined between membrane and substrate below. The ends of membrane are finished off by a gradual transition to the flat underlying n-GaN layer in which fluidic channels may also be defined to provide inlet and outlet channels to microchannel. A traveling wave or sequential voltage applied to the electrodes causes the membrane to deform and provide a peristaltic pumping action in the microchannel.

Abstract: An integrated micropump or a plurality of integrated micropumps are communicated to a plurality of analysis chambers. A plurality of integrated analysis chambers include integrated analysis devices to test a fluid for an analyte. The micropumps continuously or periodically pump the fluid into the analysis chambers and flush the analysis chambers after analysis of the analyte. In one embodiment, the analysis device comprises an integrated LED and an integrated optical detector. The LED and detector are tuned to an optical absorption line of the analyte. The micropumps are composed of nitrides of B, Al, Ga, In, Tl or combinations thereof and fabricated using photoelectrochemical techniques. The analysis chambers, and micropumps including the analysis devices are simultaneously fabricated during which fabrication of the micropumps and the analysis devices are masked from the photoelectrochemical techniques.

Abstract: A suspended p-GaN membrane is formed using photochemical etching which membrane can then be used in a variety of MEMS devices. In the illustrated embodiment a pump is comprised of the p-GaN membrane suspended between two opposing, parallel n-GaN support pillars, which are anchored to a rigid substrate below the pillars. The p-GaN membrane bows upward between the pillars in order to relieve stress built up during the epitaxial growth of membrane. This bowing substantially increases the volume of the enclosed micro-channel defined between membrane and substrate below. The ends of membrane are finished off by a gradual transition to the flat underlying n-GaN layer in which fluidic channels may also be defined to provide inlet and outlet channels to microchannel. A traveling wave or sequential voltage applied to the electrodes causes the membrane to deform and provide a peristaltic pumping action in the microchannel.

Abstract: An integrated microsensor includes a bowed micromachined membrane coupled to a substrate to define a microcavity therebetween. An integrated strain sensor is coupled to the micromachined membrane to generate a signal responsive to (deformation of the membrane and hence responsive to the pressure of the fluid in the microcavity. A frame is coupled to the peripheral edge of the membrane to assist in enlarging the microcavity. The membrane is composed of a nitride of B, Al, Ga, In, Tl or combinations thereof, or more particularly of p-type GaN where the frame is comprised of n-type GaN. The membrane and frame are fabricated using a photoelectrochemical etching technique. The fabrication of the integrated strain sensor creates stresses across the membrane. The strain sensor comprises an integrated circuit strain-FET. The strain-FET comprises an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of the membrane is coupled as strain to the AlGaN/GaN piezoelectric interface.