Abstract: A method for manufacturing a semiconductor transistor device includes etching a vertical gate trench into a silicon region, depositing a silicon gate material on an interlayer dielectric formed in the vertical gate trench so that an upper side of the interlayer dielectric is covered, etching through the silicon gate material in the vertical gate trench to partly uncover the upper side of the interlayer dielectric and so that a silicon gate region of a gate electrode of the semiconductor transistor device remains in the vertical gate trench, and depositing a metal material into the vertical gate trench so that the partly uncovered upper side of the interlayer dielectric is covered by the metal material.

Abstract: A semiconductor device includes: a semiconductor substrate; trenches formed in the substrate and extending lengthwise in parallel with one another, the trenches having connecting regions which interconnect adjacent ones of the trenches; semiconductor mesas separated from one another by the trenches in a first lateral direction and by the connecting regions in a second lateral direction transverse to the first lateral direction; a gate electrode and a field electrode below the gate electrode in at least some of the trenches, and dielectrically insulated from each other and from the semiconductor substrate; first contacts vertically extending into one or more transistor device regions in the semiconductor mesas; and second contacts vertically extending into the field electrodes in the connecting regions such that the gate electrodes are uninterrupted by the second contacts. Corresponding methods of producing such a semiconductor device are also described.

Abstract: A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.

Abstract: A semiconductor device includes: a semiconductor substrate; trenches formed in the substrate and extending lengthwise in parallel with one another, the trenches having connecting regions which interconnect adjacent ones of the trenches; semiconductor mesas separated from one another by the trenches in a first lateral direction and by the connecting regions in a second lateral direction transverse to the first lateral direction; a gate electrode and a field electrode below the gate electrode in at least some of the trenches, and dielectrically insulated from each other and from the semiconductor substrate; first contacts vertically extending into one or more transistor device regions in the semiconductor mesas; and second contacts vertically extending into the field electrodes in the connecting regions such that the gate electrodes are uninterrupted by the second contacts. Corresponding methods of producing such a semiconductor device are also described.

Abstract: A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.