Abstract: A telecommunications system for communicating data to and from a mobile device. The system comprises a plurality of repeater nodes disposed to form a network. Each repeater, node has a transceiver unit operable to transmit the data with a first transmission power to one or more other of the repeater nodes within one of a plurality of slots of a time frame. Each repeater node is allocated a time slot, and the mobile device is arranged to transmit and receive data to and from the repeater nodes in the network. Each of the repeater nodes is operable to transmit a pilot signal during the same one of the time slots of the time frame with a second transmission power, the second power being less than the first transmission power. The pilot signal includes an identifier of the repeater node which is transmitted with the pilot signal and the mobile device is operable to receive one of the pilot signals.

Abstract: This invention relates to methods for use in industrial production of recombinant globular Adiponectin (gAdiponectin). Specifically, the present invention provides a purification process suitable for production of high amounts of pure gAdiponectin. gAdiponectin is expressed in E. coli, and a purification method with which about 30 grams of gAdiponectin could be obtained from 100 liters of cell culture has been set up.

Abstract: A method for managing prescriptions includes receiving a patient assessment from a physician at an application server, receiving a prescription based on the patient assessment, determining drug interactions based on the received prescription, sending the prescription to a pharmacy based on the drug interaction determination and validating the prescription. Validating the prescription comprises a three-way match of prescription information stored on a centralized database with the filled medicine container and the bulk container. Prescriptions can be prescribed and patient records reviewed using remote devices linked to the prescription management application server and centralized database.

Abstract: An ink jet cartridge which includes an ink jet housing including a first valve and a primer portion coupled to the ink jet housing and covering the first valve is disclosed The primer portion includes a priming bulb and a second valve in the priming bulb, air flowing into the ink jet housing via the first valve when the priming valve is actuated, air flowing into the priming portion via the second valve when the priming bulb is released.

Abstract: A method for managing prescriptions includes receiving a patient assessment from a physician at an application server, receiving a prescription based on the patient assessment, determining drug interactions based on the received prescription, sending the prescription to a pharmacy based on the drug interaction determination and validating the prescription. Validating the prescription comprises a three-way match of prescription information stored on a centralized database with the filled medicine container and the bulk container. Prescriptions can be prescribed and patient records reviewed using remote devices linked to the prescription management application server and centralized database.

Abstract: A method and apparatus resetting device drivers to their factory-installed state, without requiring reinstallation of the operating system, to return the computer to a functioning condition. A back-up component is provided that backs-up and stores all associated device drivers, as originally installed by the computer manufacturer, onto non-removable media inherent to the computer system along with their preferred order of installation. A reset component is provided that retrieves the drivers from their storage location and resets, restores, or reinstalls the drivers as required, in their preferred order, as originally installed by the computer manufacturer. The reset component can be invoked automatically by a novice user, requiring little or no interaction, or it may be accessed through a graphical user interface (GUI) by a technician.

Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

Abstract: A method is provided that allows the operator to re-enter a primary wellbore from a lateral wellbore after the lateral wellbore has been completed. The method generally comprises the steps of locating a cutting device such as a milling bit adjacent a tubular such as a liner within a wellbore, rotating the milling bit while maintaining an axial position of the milling bit relative to the liner to initiate an opening, and rotating and axially advancing the milling bit to complete the opening. In addition, a bottom hole assembly that facilitates re-entry into the primary wellbore from a lateral wellbore is provided. The bottom hole assembly generally includes a drill collar or other heavy pipe structure, and a mill. The mill has a body and cutting structures. The cutting structures apply lateral force against a surrounding pipe to form an initial lip through the wall of the pipe.

Abstract: Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350° C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

Abstract: Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

Abstract: A wellbore mill has been invented having a flexible main body, and at least one milling apparatus secured on the flexible main body. A wellbore mill has been invented having a main body with a top end and a bottom end, at least one milling structure on the mill body, and a stinger projecting down from and releasably secured to the bottom end of the mill body. Methods have been invented for milling wellbore tubulars with such mills. A method for eliminating tubular offset in a wellbore has been invented, and the method includes positioning a wellbore mill in a tubular offset of a tubular string in a wellbore, the wellbore mill comprising a flexible main body and at least one milling apparatus secured on the flexible main body, and rotating the wellbore mill to mill at least part of the tubular offset.

Abstract: An essentially cylindrical, metal-encapsulated, brachytherapy source including an outer metal capsule, an annulus in a central interior position of said outer metal capsule, and a longitudinally extending heavy metal core in said annulus. The annulus is made of the same metal as said outer metal capsule. One or more low-profile welds are formed around the central circumference of the outer metal capsule for attaching the outer metal capsule to the annulus and for sealing the outer metal capsule. A plurality of substrate particles each having bound thereto a radioisotope are positioned in the outer metal capsule so that the radioisotope is distributed symmetrically within the source, equally divided between the two ends of the source, and positioned with a strong bias towards the extremes of the two ends of the source.

Abstract: A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: A method of depositing layers of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate in the same CVD chamber without incurring a dopant contamination problem. The method can be carried out by first depositing an additional layer of a dielectric insulating material prior to the deposition process of the intrinsic amorphous silicon layer. The additional layer of insulating material deposited on the substrate should have a thickness such that residual insulating material coated on the chamber walls is sufficient to cover the residual dopants on the chamber walls left by the deposition process of the previous substrate. This provides a clean environment for the next deposition process of an intrinsic amorphous silicon layer on a substrate in the same CVD chamber.

Abstract: A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.

Abstract: An improved method of depositing films of a gate silicon nitride and an amorphous silicon on a thin film transistor substrate at high deposition rates while maintaining superior film quality is provided. The material near the interface between the amorphous silicon and the nitride are deposited at a low deposition rate which produces superior quality films. The region away from the interface are deposited at a high deposition rate which produces lesser, but still good quality films. By using this method, superior quality thin film transistors can be produced at very high efficiency. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer.

Abstract: High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

Abstract: A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.