Patents by Inventor Robert Rozbicki
Robert Rozbicki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150060264Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.Type: ApplicationFiled: November 7, 2014Publication date: March 5, 2015Inventors: Mark Kozlowski, Eric Kurman, Zhongchun Wang, Mike Scobey, Jeremy Dixon, Anshu Pradhan, Robert Rozbicki
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Publication number: 20140313561Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer, which are in direct contact with one another. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In addition to the improved electrochromic devices and methods for fabrication, integrated deposition systems for forming such improved devices are also disclosed.Type: ApplicationFiled: March 13, 2014Publication date: October 23, 2014Applicant: View, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8858763Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.Type: GrantFiled: February 24, 2009Date of Patent: October 14, 2014Assignee: Novellus Systems, Inc.Inventors: Erich R. Klawuhn, Robert Rozbicki, Girish A. Dixit
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Patent number: 8765596Abstract: Material is removed from a substrate surface (e.g., from a bottom portion of a recessed feature on a partially fabricated semiconductor substrate) by subjecting the surface to a plurality of profiling cycles, wherein each profiling cycle includes a net etching operation and a net depositing operation. An etching operation removes a greater amount of material than is being deposited by a depositing operation, thereby resulting in a net material etch-back per profiling cycle. About 2-10 profiling cycles are performed. The profiling cycles are used for removing metal-containing materials, such as diffusion barrier materials, copper line materials, and metal seed materials by PVD deposition and resputter. Profiling with a plurality of cycles removes metal-containing materials without causing microtrenching in an exposed dielectric. Further, overhang is reduced at the openings of the recessed features and sidewall material coverage is improved. Integrated circuit devices having higher reliability are fabricated.Type: GrantFiled: October 22, 2010Date of Patent: July 1, 2014Assignee: Novellus Systems, Inc.Inventors: Anshu A. Pradhan, Robert Rozbicki
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Patent number: 8764951Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: GrantFiled: June 11, 2010Date of Patent: July 1, 2014Assignee: View, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8764950Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: GrantFiled: June 11, 2010Date of Patent: July 1, 2014Assignee: View, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8749868Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: GrantFiled: September 11, 2012Date of Patent: June 10, 2014Assignee: View, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8679972Abstract: The present invention pertains to methods for forming a metal diffusion barrier on an integrated circuit wherein the formation includes at least two operations. The first operation deposits barrier material via PVD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The result of the operations is a metal diffusion barrier formed in part by net etching in certain areas, in particular the bottom of vias, and a net deposition in other areas, in particular the side walls of vias. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.Type: GrantFiled: May 29, 2013Date of Patent: March 25, 2014Assignee: Novellus Systems, Inc.Inventors: Robert Rozbicki, Michal Danek, Erich Klawuhn
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Publication number: 20140022621Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.Type: ApplicationFiled: February 8, 2013Publication date: January 23, 2014Applicant: VIEW, INC.Inventors: Sridhar K. KAILASAM, Robin FRIEDMAN, Dane GILLASPIE, Anshu A. PRADHAN, Robert ROZBICKI, Disha MEHTANI
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Patent number: 8582193Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: GrantFiled: April 30, 2010Date of Patent: November 12, 2013Assignee: View, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Publication number: 20130003157Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8300298Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: GrantFiled: April 30, 2010Date of Patent: October 30, 2012Assignee: Soladigm, Inc.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8298936Abstract: Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves at least three operations. In this method, a first layer of metal is deposited onto the substrate to cover at least the bottom portions of the recessed features. The first layer of metal is subsequently redistributed to improve sidewall coverage of the recessed features. Next, a second layer of metal is deposited on at least the field region of the substrate and on the bottom portions of the recessed features. The method can be implemented using a PVD apparatus that allows deposition and resputtering operations. This sequence of operations can afford seed layers with improved step coverage. It also leads to decreased formation of voids in interconnects, and to improved resistance characteristics of formed IC devices.Type: GrantFiled: February 3, 2010Date of Patent: October 30, 2012Assignee: Novellus Systems, Inc.Inventors: Robert Rozbicki, Bart van Schravendijk, Thomas Mountsier, Wen Wu
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Patent number: 8243357Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.Type: GrantFiled: May 11, 2011Date of Patent: August 14, 2012Assignee: Soladigm, Inc.Inventors: Mark Kozlowski, Eric Kurman, Zhongchun Wang, Mike Scobey, Jeremy Dixon, Anshu Pradhan, Robert Rozbicki
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Publication number: 20110267675Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Publication number: 20110266138Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: June 11, 2010Publication date: November 3, 2011Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Publication number: 20110266137Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: June 11, 2010Publication date: November 3, 2011Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Publication number: 20110267674Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki
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Patent number: 8043484Abstract: Conductive or barrier material is deposited on a semiconductor substrate having recessed features by a method that has at least two operations. The first operation involves depositing a layer of the material on at least a portion of the field regions of the wafer. The second operation involves resputtering at least the layer residing on the field region of the wafer under high pressure. If the pressure is sufficiently high, momentum transfer reflection of the resputtered material will take place, such that at least some of the resputtered material is placed in the recessed features of the wafer. This approach can, among other advantages, offer improved step coverage and better utilization of the material.Type: GrantFiled: July 30, 2007Date of Patent: October 25, 2011Assignee: Novellus Systems, Inc.Inventor: Robert Rozbicki
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Publication number: 20110249314Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.Type: ApplicationFiled: June 22, 2011Publication date: October 13, 2011Applicant: SOLADIGM, INC.Inventors: Zhongchun Wang, Anshu Pradhan, Robert Rozbicki