Abstract: A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.

Abstract: A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.

Abstract: A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.

Abstract: A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

Abstract: A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.

Abstract: A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.

Abstract: A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting the inner and outer gates.

Abstract: A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.