Abstract: Approaches, techniques, and mechanisms are disclosed for manufacturing and operating high density memory systems. The high density memory systems can increase the amount of memory available to a computing system by allowing the connection of multiple memory modules into a single memory interface on a motherboard via a memory adapter as described herein.

Abstract: A method of manufacture of an enhanced capacity memory system includes: providing a dual in-line memory module carrier having a memory module and an integrated memory buffer coupled to the memory module; coupling a memory expansion board, having a supplementary memory module, to the dual in-line memory module carrier including attaching a bridge transposer; and providing a system interface connector coupled to the integrated memory buffer and the bridge transposer for controlling the memory module, the supplementary memory module, or a combination thereof.

Abstract: Approaches, techniques, and mechanisms are disclosed for manufacturing and operating high density memory systems. The high density memory systems can increase the amount of memory available to a computing system by allowing the connection of multiple memory modules into a single memory interface on a motherboard via a memory adapter as described herein.

Abstract: A system and method of manufacture of an integrated circuit device system includes: a module interposer having a module first side and a module second side; an outer chip assembly mounted to the module first side; a mirrored chip assembly mounted to the module second side, the mirrored chip assembly below the outer chip assembly; and a carrier attached to the module second side, the carrier includes a carrier first side and a carrier second side, the mirrored chip assembly suspended above the carrier first side.

Abstract: A method of manufacture of an enhanced capacity memory system includes: providing a dual in-line memory module carrier having a memory module and an integrated memory buffer coupled to the memory module; coupling a memory expansion board, having a supplementary memory module, to the dual in-line memory module carrier including attaching a bridge transposer; and providing a system interface connector coupled to the integrated memory buffer and the bridge transposer for controlling the memory module, the supplementary memory module, or a combination thereof.

Abstract: A method of manufacture of an enhanced capacity memory system includes: providing a dual in-line memory module carrier having a memory module and an integrated memory buffer coupled to the memory module; coupling a memory expansion board, having a supplementary memory module, to the dual in-line memory module carrier including attaching a bridge transposer; and providing a system interface connector coupled to the integrated memory buffer and the bridge transposer for controlling the memory module, the supplementary memory module, or a combination thereof.

Abstract: Integrated circuits utilizing standard commercial packaging are arranged on a printed circuit board to allow the production of 1-Gigabyte and 2-Gigabyte capacity memory modules. A first row of integrated circuits is oriented in an opposite orientation to a second row of integrated circuits. The integrated circuits in a first half of the first row and in the corresponding half of the second row are connected via a signal trace to a first register. The integrated circuits in a second half of the first row and in the corresponding half of the second row are connected to a second register. Each register processes a non-contiguous subset of the bits in each data word.

Abstract: Integrated circuits utilizing standard commercial packaging are arranged on a printed circuit board to allow the production of 1-Gigabyte and 2-Gigabyte capacity memory modules. A first row of integrated circuits is oriented in an opposite orientation to a second row of integrated circuits. The integrated circuits in a first half of the first row and in the corresponding half of the second row are connected via a signal trace to a first register. The integrated circuits in a second half of the first row and in the corresponding half of the second row are connected to a second register. Each register processes a non-contiguous subset of the bits in each data word.

Abstract: Integrated circuits utilizing standard commercial packaging are arranged on a printed circuit board to allow the production of 1-Gigabyte and 2-Gigabyte capacity memory modules. A first row of integrated circuits is oriented in an opposite orientation to a second row of integrated circuits. The integrated circuits in a first half of the first row and in the corresponding half of the second row are connected via a signal trace to a first register. The integrated circuits in a second half of the first row and in the corresponding half of the second row are connected to a second register. Each register processes a non-contiguous subset of the bits in each data word.

Abstract: Integrated circuits utilizing standard commercial packaging are arranged on a printed circuit board to allow the production of 1-Gigabyte and 2-Gigabyte capacity memory modules. A first row of integrated circuits is oriented in an opposite orientation to a second row of integrated circuits. The integrated circuits in a first half of the first row and in the corresponding half of the second row are connected via a signal trace to a first register. The integrated circuits in a second half of the first row and in the corresponding half of the second row are connected to a second register. Each register processes a non-contiguous subset of the bits in each data word.