Abstract: A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge.

Abstract: A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.

Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.

Abstract: A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge.

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed.

Abstract: Apparatus and method for patterned sequential lateral solidification of a substrate surface, avoiding the need for demagnification to avoid mask damage from fluence sufficient to overcome the threshold for sequential lateral solidification, while using the high throughput of a common stage presenting both 1:1 mask and substrate simultaneously for patterning. The radiation source provides imaging beam and non-imaging beam, each of fluence below the threshold of sequential lateral solidification, but with aggregate fluence above the threshold. The imaging beam path includes a relatively delicate 1:1 mask and 1:1 projection subsystem, with optical elements including a final fold mirror proximate to the substrate surface, put the below-threshold mask pattern on the substrate surface. The non-imaging beam bypasses the delicate elements of imaging beam path, passing through or around the final fold mirror, to impinge on the substrate surface at the same location.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: A materials-processing system based on projection irradiation using a pulsed-laser source is disclosed. The salient features include a novel illumination system containing a homogenizer that produces a self-luminous light beam of selected cross-section, spatially uniform intensity, and selected numerical aperture, as well as a novel high-efficiency, energy-recycling exposure system that provides pulse-duration extension. The output of the pulsed-laser source is shaped, optionally attenuated, and homogenized, and the pulse duration is extended by the illumination system, including beam-shaping optics, homogenizer, and optionally a condenser lens or pulse-extender-plate (PEP). The illumination is imaged either onto the mask, which is in turn imaged onto the substrate, or the illumination is imaged onto the substrate directly. The high-fluence irradiation effects a desired physical change in the material, for example melting and solidification as required in the sequential lateral solidification (SLS) process.

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: Apparatus and method for patterned sequential lateral solidification of a substrate surface, avoiding the need for demagnification to avoid mask damage from fluence sufficient to overcome the threshold for sequential lateral solidification, while using the high throughput of a common stage presenting both 1:1 mask and substrate simultaneously for patterning. The radiation source provides imaging beam and non-imaging beam, each of fluence below the threshold of sequential lateral solidification, but with aggregate fluence above the threshold. The imaging beam path includes a relatively delicate 1:1 mask and 1:1 projection subsystem, with optical elements including a final fold mirror proximate to the substrate surface, put the below-threshold mask pattern on the substrate surface. The non-imaging beam bypasses the delicate elements of imaging beam path, passing through or around the final fold mirror, to impinge on the substrate surface at the same location.

Abstract: Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.