Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: A light emitting diode (LED) is fabricated using an underfill layer that is deposited on either the LED or the submount prior to mounting the LED to a submount. The deposition of the underfill layer prior to mounting the LED to the submount provides for a more uniform and void free support, and increases underfill material options to permit improved thermal characteristics. The underfill layer may be used as support for the thin and brittle LED layers during the removal of the growth substrate prior to mounting the LED to the submount. Additionally, the underfill layer may be patterned to and/or polished back so that only the contact areas of the LED and/or submount are exposed. The patterns in the underfill may also be used as a guide to assist in the singulating of the devices.

Abstract: A light emitting diode (LED) is fabricated using an underfill layer that is deposited on either the LED or the submount prior to mounting the LED to a submount. The deposition of the underfill layer prior to mounting the LED to the submount provides for a more uniform and void free support, and increases underfill material options to permit improved thermal characteristics. The underfill layer may be used as support for the thin and brittle LED layers during the removal of the growth substrate prior to mounting the LED to the submount. Additionally, the underfill layer may be patterned to and/or polished back so that only the contact areas of the LED and/or submount are exposed. The patterns in the underfill may also be used as a guide to assist in the singulating of the devices.

Abstract: A backlight uses an array of red, green, and blue LEDs in a mixing chamber. The mixing chamber has reflecting surfaces and a top opening for illuminating LCD layers. A desired brightness profile and better color uniformity are obtained by using techniques including arranging the LEDs in certain sequences and patterns, providing a specular ring at the base of each LED, attenuating the brightness of the LEDs at the edges, and using widely separated diffusers in the mixing chamber. The arrangement, selection, and control of the multicolored LEDs may be tailored to achieve any desired white point specified by the display manufacturer.

Abstract: A mixing chamber includes a first surface and a second surface opposite the first surface. At least two light emitting diodes are disposed along the first surface. At least a portion of the first surface is reflective, and the second surface includes a reflective region and a plurality of openings formed in the reflective region. In some embodiments, the first surface and the second surface are separated by at least one side surface. Light emitted from the light emitting diodes is reflected off the first surface, reflective region of the second surface, and side surfaces of the mixing chamber until it is emitted from the openings of the second surface.

Abstract: A mixing chamber includes a first surface and a second surface opposite the first surface. At least two light emitting diodes are disposed along the first surface. At least a portion of the first surface is reflective, and the second surface includes a reflective region and a plurality of openings formed in the reflective region. In some embodiments, the first surface and the second surface are separated by at least one side surface. Light emitted from the light emitting diodes is reflected off the first surface, reflective region of the second surface, and side surfaces of the mixing chamber until it is emitted from the openings of the second surface. In another embodiment, a structure includes a light emitting diode, a lens overlying the light emitting diode, and a diverting optic overlying the lens. The diverting optic may include, for example, a specular or diffuse reflector, a bulk or film diffuser, and a transparent material.

Abstract: A lens comprises a bottom surface, a reflecting surface, a first refracting surface obliquely angled with respect to a central axis of the lens, and a second refracting surface extending as a smooth curve from the bottom surface to the first refracting surface. Light entering the lens through the bottom surface and directly incident on the reflecting surface is reflected from the reflecting surface to the first refracting surface and refracted by the first refracting surface to exit the lens in a direction substantially perpendicular to the central axis of the lens. Light entering the lens through the bottom surface and directly incident on the second refracting surface is refracted by the second refracting surface to exit the lens in a direction substantially perpendicular to the central axis of the lens. The lens may be advantageously employed with LEDs, for example, to provide side-emitting light-emitting devices. A lens cap attachable to a lens is also provided.

Abstract: A lens comprises a bottom surface, a reflecting surface, a first refracting surface obliquely angled with respect to a central axis of the lens, and a second refracting surface extending as a smooth curve from the bottom surface to the first refracting surface. Light entering the lens through the bottom surface and directly incident on the reflecting surface is reflected from the reflecting surface to the first refracting surface and refracted by the first refracting surface to exit the lens in a direction substantially perpendicular to the central axis of the lens. Light entering the lens through the bottom surface and directly incident on the second refracting surface is refracted by the second refracting surface to exit the lens in a direction substantially perpendicular to the central axis of the lens. The lens may be advantageously employed with LEDs, for example, to provide side-emitting light-emitting devices. A lens cap attachable to a lens is also provided.

Abstract: A lens mounted to a light emitting diode package internally redirects light within the lens so that a majority of light is emitted from the lens approximately perpendicular to a package axis of the light emitting diode package. In one embodiment, the light emitted by the light emitting diode package is refracted by a sawtooth portion of the lens and reflected by a total internal reflection portion of the lens.

Abstract: A lens mounted to a light emitting diode package internally redirects light within the lens so that a majority of light is emitted from the lens approximately perpendicular to a package axis of the light emitting diode package. In one embodiment, the light emitted by the light emitting diode package is refracted by a sawtooth portion of the lens and reflected by a total internal reflection portion of the lens.

Abstract: A lens mounted to a light emitting diode package internally redirects light within the lens so that a majority of light is emitted from the lens approximately perpendicular to a package axis of the light emitting diode package. In one embodiment, the light emitted by the light emitting diode package is refracted by a sawtooth portion of the lens and reflected by a total internal reflection portion of the lens.

Abstract: A lens mounted to a light emitting diode package internally redirects light within the lens so that a majority of light is emitted from the lens approximately perpendicular to a package axis of the light emitting diode package. In one embodiment, the light emitted by the light emitting diode package is refracted by a sawtooth portion of the lens and reflected by a total internal reflection portion of the lens.

Abstract: Sputtering apparatus and method suitable for forming a step coating on a workpiece. A workpiece is supported in a chamber, particles are emitted from a sputtering source, and the particles are passed through a collimating filter having a plurality of transmissive cells positioned between the sputtering source and the workpiece to limit the angles at which the particles can be deposited onto the workpiece. The collimating filter varies in height from a center portion to an outer portion while preferably maintaining a constant cell aspect ratio.