Patents by Inventor Robert Sposili

Robert Sposili has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR PRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS USING SEQUENTIAL LATERIAL SOLIDIFICATION
    Publication number: 20070202668
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: May 4, 2007
    Publication date: August 30, 2007
    Inventors: James Im, Robert Sposili, Mark Crowder
  • SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD
    Publication number: 20070145017
    Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.
    Type: Application
    Filed: February 6, 2007
    Publication date: June 28, 2007
    Applicant: The Trustees Of Columbia University
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Pulse sequencing lateral growth method
    Publication number: 20060054077
    Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
    Type: Application
    Filed: October 31, 2005
    Publication date: March 16, 2006
    Inventors: Apostolos Voutsas, Robert Sposili, Mark Crowder
  • Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
    Publication number: 20050255640
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: June 1, 2005
    Publication date: November 17, 2005
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Low-fluence irradiation for lateral crystallization enabled by a heating source
    Publication number: 20050158995
    Abstract: A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
    Type: Application
    Filed: February 18, 2005
    Publication date: July 21, 2005
    Inventors: Robert Sposili, Mark Crowder
  • Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
    Publication number: 20050103255
    Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 19, 2005
    Inventors: Apostolos Voutsas, Robert Sposili, Mark Crowder
  • Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
    Publication number: 20050032249
    Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.
    Type: Application
    Filed: September 13, 2004
    Publication date: February 10, 2005
    Inventors: James Im, Robert Sposili, Mark Crowder