Abstract: Provided are methods of fabricating a semiconductor structure. The methods include providing a III-V semiconductor substrate selected from InGaAs and InAs, introducing an n-type dopant selected from S, Se, and Te directly onto a surface of the III-V semiconductor substrate, introducing a co-dopant selected from N and P directly onto a surface of the III-V semiconductor substrate, and diffusing the n-type and co-dopant into the III-V semiconductor substrate, thereby forming an n-doped III-V semiconductor substrate containing the n-type dopant and the co-dopant. The methods produce inventive semiconductor structures, and devices that include the semiconductor structure.

Abstract: The present invention includes methods directed to improved processes for producing a monolayer of sulfur or selenium on the surface of a semiconductor. As a surface layer, it functions to passivate the surface; if annealed, it provides a doping element.

Abstract: Provided are methods for preparing a doped silicon material. The methods include contacting a surface of a silicon material with a dopant solution comprising a dopant-containing compound selected from a phosphorus-containing compound and an arsenic-containing compound, to form a layer of dopant material on the surface; and diffusing the dopant into the silicon material, thereby forming the doped silicon material, wherein the doped silicon material has a sheet resistance (Rs) of less than or equal to 2,000 ?/sq.