Patents by Inventor Robert W. Bickes, Jr.

Robert W. Bickes, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6438191
    Abstract: A new approach to scabbling of surfaces of structural materials is disclosed. A layer of mildly energetic explosive composition is applied to the surface to be scabbled. The explosive composition is then detonated, rubbleizing the surface. Explosive compositions used must sustain a detonation front along the surface to which it is applied and conform closely to the surface being scabbled. Suitable explosive compositions exist which are stable under handling, easy to apply, easy to transport, have limited toxicity, and can be reliably detonated using conventional techniques.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: August 20, 2002
    Assignee: Sandia Corporation
    Inventors: Robert W. Bickes, Jr., Lloyd L. Bonzon
  • Patent number: 5861570
    Abstract: The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.
    Type: Grant
    Filed: April 23, 1996
    Date of Patent: January 19, 1999
    Assignee: Sandia Corporation
    Inventors: Robert W. Bickes, Jr., Mark C. Grubelich
  • Patent number: 4976200
    Abstract: A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.
    Type: Grant
    Filed: December 30, 1988
    Date of Patent: December 11, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: David A. Benson, Robert W. Bickes, Jr., Robert S. Blewer
  • Patent number: 4843964
    Abstract: A non electrically conductive substrate includes both an SCB and a semiconductor switch, the switch being electrically connected to cause the SCB to fire when the switch is triggered.
    Type: Grant
    Filed: February 1, 1988
    Date of Patent: July 4, 1989
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert W. Bickes, Jr., Kevin D. Marbach, Paul D. Wilcox
  • Patent number: 4708060
    Abstract: In an explosive device comprisingan explosive material which can be made to explode upon activation by activation means in contact therewith;electrical activation means adaptable for activating said explosive material such that it explodes; andelectrical circuitry in operation association with said activation means;there is an improvement wherein said activation means is an electrical material which, at an elevated temperature, has a negative temperature coefficient of electrical resistivity and which has a shape and size and an area of contact with said explosive material sufficient that it has an electrical resistance which will match the resistance requirements of said associated electrical circuitry when said electrical material is operationally associated with said circuitry,and wherein said electrical material is polycrystalline; or said electrical material is crystalline and (a) is mounted on a lattice matched substrate or (b) is partially covered with an intimately contacting metallization area which
    Type: Grant
    Filed: February 19, 1985
    Date of Patent: November 24, 1987
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert W. Bickes, Jr., Alfred C. Schwarz
  • Patent number: 4621577
    Abstract: The invention is a detonator for use with high explosives. The detonator comprises a pair of parallel rail electrodes connected to a power supply. By shorting the electrodes at one end, a plasma is generated and accelerated toward the other end to impact against explosives. A projectile can be arranged between the rails to be accelerated by the plasma. An alternative arrangement is to a coaxial electrode construction. The invention also relates to a method of detonating explosives.
    Type: Grant
    Filed: January 4, 1985
    Date of Patent: November 11, 1986
    Assignee: The United States of America as represented by the Department of Energy
    Inventors: Robert W. Bickes, Jr., Michael R. Kopczewski, Alfred C. Schwarz
  • Patent number: H1366
    Abstract: A detonator for high explosives initiated by mechanical impact includes a cylindrical barrel, a layer of flyer material mechanically covering the barrel at one end, and a semiconductor bridge ignitor including a pair of electrically conductive pads connected by a semiconductor bridge. The bridge is in operational contact with the layer, whereby ignition of said bridge forces a portion of the layer through the barrel to detonate the explosive. Input means are provided for igniting the semiconductor bridge ignitor.
    Type: Grant
    Filed: February 28, 1989
    Date of Patent: November 1, 1994
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert W. Bickes, Jr., Anita M. Renlund, Philip L. Stanton