Abstract: The present invention provides a method of manufacturing a semiconductor device. The semiconductor device (100), among other possible elements, includes a first transistor (120) located over a semiconductor substrate (110), wherein the first transistor (120) has a gate electrode (135) that includes a metal silicide layer 135a over which is located a silicon gate layer (135b) together which have a work function associated therewith, and a second transistor (125) located over the semiconductor substrate (110) and proximate the first transistor (120), wherein the second transistor (125) also includes a gate electrode (160) that includes a metal silicide layer (160a) over which is located a silicon gate layer (160b) together which have a different work function from that of the first gate electrode (135) associated therewith.

Abstract: An ion implanting architecture (60). The architecture comprises an arc chamber (64) having an interior area (64i). The architecture also comprises a plurality of electron sources (66, 68) disposed at least partially within the interior area. Each of the plurality of sources comprises a conductive plate (72, 80) operable to emit electrons into the interior area and a heating element (70, 78)for transferring heat to the conductive plate.