Patents by Inventor Robert W. Stitz

Robert W. Stitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CVD heat source
    Patent number: 4640224
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: February 3, 1987
    Assignee: Spectrum CVD, Inc.
    Inventors: Matthew L. Bunch, J. B. Price, Robert W. Stitz
  • CVD plasma reactor
    Patent number: 4632057
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: December 30, 1986
    Assignee: Spectrum CVD, Inc.
    Inventors: J. B. Price, Matthew L. Bunch, Robert W. Stitz
  • CVD temperature control
    Patent number: 4632056
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: December 30, 1986
    Inventors: Robert W. Stitz, J. B. Price
  • CVD heater control circuit
    Patent number: 4607591
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 6, 1985
    Date of Patent: August 26, 1986
    Assignee: Spectrum CVD, Inc.
    Inventor: Robert W. Stitz