Abstract: A filtering apparatus for purifying cooking oil is provided. The filtering apparatus comprises a housing, a filter housing including a filter and a first conduit in communication with a deep fryer for extraction of cooking oil requiring purifying from the deep fryer. The apparatus further comprises a pump for pumping cooking oil through the first conduit, a valve assembly in flow communication with the pump, and a second conduit in flow communication with the pump which transports cooking oil to the filter housing. The filtering apparatus also comprises one or more heating cables attached to the first and second conduits and located adjacent the pump and valve assembly, and a thermostat in communication with a thermostat probe attached to the first and second conduits and the valve assembly and pump, whereby use of the thermostat prevents activation of said one or more heating cables when activation is not required.

Abstract: Provided is a method for culturing Mycobacteria in the presence of a class A lantibiotic, thereby inhibiting or reducing bacterial contamination in the culture, without significantly disadvantageously affecting or retarding mycobacterial growth. Further provided are the Mycobacteria culture produced thereby, methods for detecting Mycobacteria in a biological sample under conditions that reduce bacterial contamination, and for diagnosing a mycobacterial infection in a biological sample from a subject suspected of having such an infection, as well as, kits useful in practicing such methods.

Abstract: A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.