Patents by Inventor Robert WRIGHT, JR.
Robert WRIGHT, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240123391Abstract: Tungsten precursors with high purity and methods for purifying tungsten precursors are provided. The method for purifying a precursor may comprise at least one of the following steps: obtaining a source vessel containing WCl4, WOCl4, and one of WCl5 or WCl6; separating the WCl5 or the WCl6 from at least a first portion of the WOCl4; separating the WCl5 or the WCl6 from at least a second portion of the WOCl4; recovering a precursor in a collection vessel; or any combination thereof.Type: ApplicationFiled: October 4, 2023Publication date: April 18, 2024Inventors: Robert Wright, JR., Bryan Hendrix, Loren Press, Benjamin Garrett
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Publication number: 20240035157Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.Type: ApplicationFiled: August 1, 2023Publication date: February 1, 2024Inventors: Robert Wright, JR., Thomas H. Baum, Bryan C. Hendrix, Shawn D. Nguyen, Han Wang, Philip S. H. Chen
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Publication number: 20240034745Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.Type: ApplicationFiled: September 27, 2023Publication date: February 1, 2024Inventors: David M. Ermert, Thomas H. Baum, Robert Wright, Jr.
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Patent number: 11807653Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.Type: GrantFiled: May 4, 2022Date of Patent: November 7, 2023Assignee: ENTEGRIS, INC.Inventors: David M. Ermert, Thomas H. Baum, Robert Wright, Jr.
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Patent number: 11761081Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.Type: GrantFiled: September 20, 2019Date of Patent: September 19, 2023Assignee: ENTEGRIS, INC.Inventors: Robert Wright, Jr., Thomas H. Baum, Bryan C. Hendrix, Shawn D. Nguyen, Han Wang, Philip S. H. Chen
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Patent number: 11746413Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.Type: GrantFiled: May 31, 2022Date of Patent: September 5, 2023Assignee: ENTEGRIS, INC.Inventors: David James Eldridge, David Peters, Robert Wright, Jr., Bryan C. Hendrix, Scott L. Battle, John Gregg
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Publication number: 20230128330Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.Type: ApplicationFiled: December 14, 2022Publication date: April 27, 2023Inventors: Robert WRIGHT, JR., Shuang MENG, Bryan C. HENDRIX, Thomas H. BAUM, Philip S.H. CHEN
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Patent number: 11560625Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.Type: GrantFiled: January 11, 2019Date of Patent: January 24, 2023Assignee: ENTEGRIS, INC.Inventors: Robert Wright, Jr., Shuang Meng, Bryan C. Hendrix, Thomas H. Baum, Philip S. H. Chen
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Publication number: 20220298629Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.Type: ApplicationFiled: May 31, 2022Publication date: September 22, 2022Inventors: David James Eldridge, David Peters, Robert Wright, JR., Bryan C. Hendrix, Scott L. Battle, JR., John Gregg
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Patent number: 11421320Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.Type: GrantFiled: December 5, 2018Date of Patent: August 23, 2022Assignee: ENTEGRIS, INC.Inventors: David James Eldridge, David Peters, Robert Wright, Jr., Bryan C. Hendrix, Scott L. Battle, John Gregg
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Publication number: 20220259236Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.Type: ApplicationFiled: May 4, 2022Publication date: August 18, 2022Inventors: David M. Ermert, Thomas H. Baum, Robert Wright, JR.
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Patent number: 11352383Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.Type: GrantFiled: February 27, 2020Date of Patent: June 7, 2022Assignee: ENTEGRIS, INC.Inventors: David M. Ermert, Thomas H. Baum, Robert Wright, Jr.
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Publication number: 20200270289Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.Type: ApplicationFiled: February 27, 2020Publication date: August 27, 2020Inventors: David M. ERMERT, Thomas H. BAUM, Robert WRIGHT, JR.
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Publication number: 20200199743Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.Type: ApplicationFiled: December 13, 2019Publication date: June 25, 2020Inventors: Robert WRIGHT, JR., Bryan C. HENDRIX, Thomas H. BAUM, James WOECKENER
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Publication number: 20200131628Abstract: A process for forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum dioxydichloride (MoO2Cl2) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. Advantageously, the robust process does not require pre-treatment of the substrate with a nucleating agent. In certain embodiments, the process results in the bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD or ALD.Type: ApplicationFiled: October 8, 2019Publication date: April 30, 2020Inventors: Thomas H. BAUM, Bryan C. HENDRIX, Philip S.H. CHEN, Robert WRIGHT, JR., James WOECKENER
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Publication number: 20200115798Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.Type: ApplicationFiled: September 20, 2019Publication date: April 16, 2020Inventors: Robert WRIGHT, Jr., Thomas H. BAUM, Bryan C. HENDRIX, Shawn D. NGUYEN, Han WANG, Philip S.H. CHEN
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Publication number: 20200009967Abstract: A device and method for assuring fail safe operation of an energy vending system. Such systems are primarily used to recharge the batteries in electric vehicles. Fail safe operation assures that any failure of the energy vending system automatically disables all forms of energy release that could cause harm to individuals or property in the system's vicinity. All forms of failure such as earthquake are included but failure caused by accidental disruption such as a vehicle crash is considered primary.Type: ApplicationFiled: July 3, 2018Publication date: January 9, 2020Inventors: Carlile R Stevens, Robert Wright, JR., James E. Maddox, III
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Publication number: 20190226086Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.Type: ApplicationFiled: January 11, 2019Publication date: July 25, 2019Inventors: Robert Wright, JR., Shuang MENG, Bryan C. HENDRIX, Thomas H. BAUM, Philip S.H. CHEN
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Publication number: 20190177840Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.Type: ApplicationFiled: December 5, 2018Publication date: June 13, 2019Inventors: David James ELDRIDGE, David PETERS, Robert WRIGHT, JR., Bryan C. HENDRIX, Scott L. BATTLE, John GREGG