Abstract: Systems and methods for delivering timely personalized information about vulnerable persons to authorities and/or to caregivers. This may provide critical situational information in real or near real time to authorities and/or to caregivers in order to help increase public safety, reduce risks and/or improve the quality of life for vulnerable persons and parties responsible for the safety and well-being of the vulnerable persons.

Abstract: A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure includes a main portion and an end portion terminating the electrode structure. The main portion includes a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion. The end portion includes a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side. The filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric.

Abstract: A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor cells comprises a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, a drift zone of the first conductivity type, and a trench gate structure extending into the semiconductor body through the body zone along a vertical direction. The trench gate structure comprises a gate electrode separated from the semiconductor body by a trench dielectric. The trench dielectric comprises a source dielectric part interposed between the gate electrode and the source zone and a gate dielectric part interposed between the gate electrode and the body zone. The ratio of a maximum thickness of the source dielectric part along a lateral direction and the minimum thickness of the gate dielectric part along the lateral direction is at least 1.5.

Abstract: By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and trench gate electrodes of power transistor cells are formed in the first and second trenches. A protection cover including a silicon nitride layer is formed that covers a cell area with the first and second trenches. With the protection cover covering the cell area, planar gate electrodes of lateral transistors are formed in a support area of the semiconductor layer.

Abstract: A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.

Abstract: A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure includes a main portion and an end portion terminating the electrode structure. The main portion includes a field electrode and a first portion of a field dielectric separating the field electrode from the semiconductor portion. The end portion includes a filled section in which a second portion of the field dielectric extends from a first side of the electrode structure to an opposite second side. The filled section is narrower than the main portion and a length of the filled section along a longitudinal axis of the electrode structure is at least 150% of a first layer thickness of the first portion of the field dielectric.

Abstract: A computer-implemented method, implemented, at least in part, by hardware in combination with software, the method includes (A) obtaining text from a document; (B) parsing said text using at least one parallel sentence parsing process to obtain sentence data from said text; (C) parsing said sentence data using at least one parallel noun parsing process to obtain text data from said sentence data; (D) scoring said text data using at least one term scorer process and a known word list to obtain scored terms corresponding to said text data; and (E) determining known word scores corresponding to said text data, using said known word list, wherein said known word scores comprise base scores and category penetration scores; wherein steps (B), (C), (D), and (E) operate in parallel for at least some of the text from the document.

Abstract: A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor cells comprises a source zone of a first conductivity type, a body zone of a second, complementary conductivity type, a drift zone of the first conductivity type, and a trench gate structure extending into the semiconductor body through the body zone along a vertical direction. The trench gate structure comprises a gate electrode separated from the semiconductor body by a trench dielectric. The trench dielectric comprises a source dielectric part interposed between the gate electrode and the source zone and a gate dielectric part interposed between the gate electrode and the body zone. The ratio of a maximum thickness of the source dielectric part along a lateral direction and the minimum thickness of the gate dielectric part along the lateral direction is at least 1.5.

Abstract: A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.

Abstract: By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and trench gate electrodes of power transistor cells are formed in the first and second trenches. A protection cover including a silicon nitride layer is formed that covers a cell area with the first and second trenches. With the protection cover covering the cell area, planar gate electrodes of lateral transistors are formed in a support area of the semiconductor layer.

Abstract: A computer-implemented method, implemented, at least in part, by hardware in combination with software, the method includes (A) obtaining text from a document; (B) parsing said text using at least one parallel sentence parsing process to obtain sentence data from said text; (C) parsing said sentence data using at least one parallel noun parsing process to obtain text data from said sentence data; (D) scoring said text data using at least one term scorer process and a known word list to obtain scored terms corresponding to said text data; and (E) determining known word scores corresponding to said text data, using said known word list, wherein said known word scores comprise base scores and category penetration scores; wherein steps (B), (C), (D), and (E) operate in parallel for at least some of the text from the document.

Abstract: A method and apparatus for facilitating shoulder arthroplasty by providing a reference to establish version of the glenoid. In one form of the invention, a guide for positioning a guide pin to facilitate implantation of a glenoid prosthesis is provided. To properly position the guide pin, the guide is first oriented with respect to the scapula. A portion of the guide is positioned over the approximate center of the glenoid surface and another portion of the guide is positioned against the anterior surface of the scapula. After the guide is properly positioned, the guide pin is inserted through an aperture in the guide and anchored in the glenoid. Thereafter, the guide pin can serve as an alignment guide for other devices used to modify the glenoid surface. For example, a reamer having a cannulated central shaft can be placed over the guide pin and utilized to resurface the glenoid.

Abstract: The invention relates to a valve arrangement for a gas installation comprising a valve body with at least one gas inlet, whereby at least one gas outlet is assigned to a gas inlet and, more particularly whereby one gas outlet can be closed by means of a medium-controlled or flame-controlled safety valve element, whereby one gas outlet be reduced in cross-section and/or closed by means of a valve element arranged on a non-rotating shaft, whereby the actuator (6) of the valve element (10) is in the form of a linear motor (6) on the shaft of which the valve element (10) is directly arranged.

Abstract: A method and apparatus for facilitating shoulder arthroplasty by providing a reference to establish version of the glenoid. In one form of the invention, a guide for positioning a guide pin to facilitate implantation of a glenoid prosthesis is provided. To properly position the guide pin, the guide is first oriented with respect to the scapula. A portion of the guide is positioned over the approximate center of the glenoid surface and another portion of the guide is positioned against the anterior surface of the scapula. After the guide is properly positioned, the guide pin is inserted through an aperture in the guide and anchored in the glenoid. Thereafter, the guide pin can serve as an alignment guide for other devices used to modify the glenoid surface. For example, a reamer having a cannulated central shaft can be placed over the guide pin and utilized to resurface the glenoid.

Abstract: A burner assembly has a ring generally centered on an axis and defining an array of outwardly open holes and a compartment at the axis. A gas/air mixture is fed to the ring to project jets of the mixture from the holes so that, when ignited, the jets form a main annular flame centered on the axis. A relatively small burner in the compartment is generally centered on the axis, and a horizontal plate on the ring overlies and covers the compartment and the burner. A gas/air mixture is supplied to the burner to the burner to form in the chamber underneath the plate a small flame centered on the axis. The cover plate is a generally circular disk having an outer diameter greater than an outer diameter of the small burner. The disk outer diameter is greater than an inner diameter of the ring.

Abstract: A gas stove burner has a base defining an axis and a ring assembly sitting on the base, forming therewith an annular outer compartment and a central inner compartment, and formed with an array of outwardly open lower passages open radially inward into the outer compartment. A generally imperforate cover disk overlying the ring assembly has an outer edge, upwardly closes the inner compartment, and forms with the ring assembly an array of upper passages open radially inward into the inner compartment and radially outward at the disk outer edge. Inlets on the base feed respective gas/air mixtures to the compartments and form a main flame at the edge from the mixture exiting the lower passages and a simmer flame at the edge from the mixture exiting the upper passages.

Abstract: A gas stove burner has a base defining an axis and a ring assembly sitting on the base, forming therewith an annular outer compartment and a central inner compartment, and formed with an array of outwardly open lower passages open radially inward into the outer compartment. A generally imperforate cover disk overlying the ring assembly has an outer edge, upwardly closes the inner compartment, and forms with the ring assembly an array of upper passages open radially inward into the inner compartment and radially outward at the disk outer edge. Inlets on the base feed respective gas/air mixtures to the compartments and form a main flame at the edge from the mixture exiting the lower passages and a simmer flame at the edge from the mixture exiting the upper passages.

Abstract: A stove burner safety system has an electromagnetic valve and a manual gas cock controlling the gas flow to the burner and a spark plug adjacent the burner which receives a spark pulse from the electric circuitry which also controls an electromagnetic valve. When the stem of the manual valve is actuated a switch turns on the electric module and when a flame failure is detected a train of a certain number of spark pulses is supplied to the spark plug and if reignition does not occur within a certain number of pulse or a certain time, the electromagnetic valve is turned off.