Patents by Inventor Roberto Aina

Roberto Aina has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material composite structure using electric connection structure
    Patent number: 6504253
    Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: January 7, 2003
    Assignee: STMicroelectronics S.r.l.
    Inventors: Ubaldo Mastromatteo, Fabrizio Ghironi, Roberto Aina, Mauro Bombonati
  • Process of manufacturing a composite structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material
    Patent number: 6498053
    Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
    Type: Grant
    Filed: May 21, 2002
    Date of Patent: December 24, 2002
    Assignee: STMicroelectronics S.r.l.
    Inventors: Ubaldo Mastromatteo, Fabrizio Ghironi, Roberto Aina, Mauro Bombonati
  • Process of manufacturing a composite structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material
    Publication number: 20020135062
    Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
    Type: Application
    Filed: May 21, 2002
    Publication date: September 26, 2002
    Applicant: STMicroelectronics S.r.I.
    Inventors: Ubaldo Mastromatteo, Fabrizio Ghironi, Roberto Aina, Mauro Bombonati
  • Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material, composite structure using the electric connection structure, and manufacturing process thereof
    Publication number: 20010038148
    Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
    Type: Application
    Filed: April 27, 2001
    Publication date: November 8, 2001
    Inventors: Ubaldo Mastromatteo, Fabrizio Ghironi, Roberto Aina, Mauro Bombonati