Patents by Inventor Roberto Gamboa

Roberto Gamboa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the growth of semiconductor ribbons
    Patent number: 7799131
    Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: September 21, 2010
    Assignee: Faculdade de Ciencias Da Universidade de Lisboa
    Inventors: António Vallêra, João Serra, Jorge Maia Alves, Miguel Brito, Roberto Gamboa, João Henriques
  • Method for the Growth of Semiconductor Ribbons
    Publication number: 20070241481
    Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.
    Type: Application
    Filed: April 15, 2004
    Publication date: October 18, 2007
    Applicant: FACULDADE DE CIENCIAS DA UNIVERSIDADE DE LISBOA
    Inventors: Antonio Vallera, Serra Joao, Jorge Maia Alves, Miguel Brito, Roberto Gamboa, Joao Henriques