Abstract: A semiconductor device with a semiconductor body (1) whose surface (4) is provided with a barrier layer (8) of Ti.sub.x W.sub.1-x, with 0.1<x<0.3. The barrier layer (8) is used, for example, between contact zones (3) of silicon or metal silicides provided in the semiconductor body (1) and conductor tracks (9) of aluminium provided on the surface (4) with the purpose of counteracting chemical reactions between silicon and aluminium. According to the invention, the barrier layer (8) is so deposited that in this layer the distance between the (100) lattice faces of tungsten is greater than 2.25.ANG.. It is achieved in this way that the barrier layer (8) has equally good or even better barrier properties as/than a Ti.sub.x W.sub.1-x layer which has been exposed to air for a few days. It is found that, if the barrier layer (8) is deposited by means of a sputter deposition process, the distance between the (100) lattice faces of W is determined by the voltage applied to the sputter target during deposition.

Abstract: A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4). Metals such as palladium and copper may be used to form the discontinuous layer.

Abstract: A method of manufacturing a semiconductor device whereby a layer (3) containing aluminium is deposited by means of a sputter deposition process on a surface (1) of a semiconductor body (2) which is placed on a holder (21) in a reaction chamber (20). The semiconductor body (2) is cooled down to a temperature below 150 K. during the deposition process. A smooth, flat layer with a good step coverage is deposited in this way.

Abstract: A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.

Abstract: A method of manufacturing a semiconductor device comprising a semiconductor body (3) with a surface (10) on which capacitors (2) are provided, which form memory elements, with a lower electrode (11) including platinum, a ferroelectric dielectric material (12) and an upper electrode (13) is presented. In the method according to the invention, the electrodes (11, 13) including platinum are formed by the successive deposition on a surface of a first layer (19, 26) comprising a metal from the group titanium, zirconium, hafnium or an alloy of these metals, a second layer (20, 27) comprising platinum, and a third layer (21, 28) comprising a metal from the group titanium, zirconium, hafnium, or an alloy of these metals, upon which the semiconductor body is heated in an atmosphere containing oxygen. The first metal layer ensures a good adhesion of the electrode, the second layer acts as the electrode proper, while the third metal layer counteracts adverse effects of the first layer.